A Novel High Performance Die Attach for Ceramic Packages
A novel two-step process based on isothermal solidification is developed for die attachment of ceramic package. With a simple design of the multilayer system, silicon chip could be bonded onto the allumina substrate in between 200°C and 300°C. The total process time is less than 15 seconds during which the actual assembly time is within one second. Most of the samples can pass the shear strength test specified by MIL STD 883D. All the samples could pass 1750 cycles between −55°C and 125°C with slight degradation in die shear strength after the test. The microstructures of the bonds are characterized with metallographical investigation. Comparisons are made between the present technique and the Au/Si eutectic bonding. [S1043-7398(00)01202-0]