Degradation of Silicon Carbide in Combustion Gas Flow at High-Temperature and Speed

2000 ◽  
Author(s):  
I. Yuri ◽  
T. Hisamatsu ◽  
Y. Etori ◽  
T. Yamamoto
Keyword(s):  
Silicon Carbide ◽  
Weight Loss ◽  
Water Vapor ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Vapor Partial Pressure ◽  
Water Vapor Partial Pressure

Effects of various basic factors of combustion gas flow conditions on degradation behaviors of silicon carbide have been experimentally determined. The exposure tests were performed for widely varied experimental parameters of the gas temperatures (T = 900–1500°C), pressure (P = 0.3–0.8MPa), gas flow rate (V = 50–250m/s), water vapor partial pressure (PH2O = 32–82kPa) and oxygen partial pressure (PO2 = 24–44kPa). Degradation behaviors of silicon carbide were expressed as the weight loss of the substrate. The weight loss rate depends on the water vapor partial pressure remarkably. The effect of the oxygen partial pressure on the weight loss was smaller than that of the water vapor partial pressure, and the weight loss decreased with the increase of the oxygen partial pressure. Considering the effects of partial pressures of oxygen and water vapor, the gas temperature and the pressure didn’t have much effect on the weight loss. The weight loss depends on the gas flow rate, the increase rate of the weight loss for the gas flow rate becomes small with the gas flow rate. Consequently, the water vapor partial pressure, the oxygen partial pressure, the gas temperature, the pressure and the gas flow rate dependence of the weight loss rate is expressed as PH2O1.9 V0.6 P0.3 / PO20.6.

Exposure Test Results of Lu2Si2O7 in Combustion Gas Flow at High Temperature and High Speed

2004 ◽  
Author(s):  
Isao Yuri ◽  
Tohru Hisamatsu ◽  
Shunkichi Ueno ◽  
Tatsuki Ohji
Keyword(s):  
Weight Loss ◽  
Water Vapor ◽  
Partial Pressure ◽  
Gas Flow ◽  
Loss Rate ◽  
Gas Temperature ◽  
Weight Loss Rate ◽  
Combustion Gas ◽  
Vapor Partial Pressure ◽  
Water Vapor Partial Pressure

In order to understand recession behavior and the amount of recession of Lu2Si2O7 in the combustion gas flow, sintered Lu2Si2O7 specimens were manufactured by hot pressing and exposed under various combustion gas flow conditions (T = 1300–1500 °C, P = 0.3 MPa, V = 150 m/s, PH2O = 27–69 kPa, t = 10h). After the exposure tests, etch pits, which are assumed to form due to volatilization of SiO2 in the grain boundary phase, were observed at the surface of specimen. The amount of Lu2SiO5 phase at the surface of specimen increased with the increase of gas temperature or water vapor partial pressure. A corresponding decrease in the amount of Lu2Si2O7 phase was observed. Furthermore, by using the average weight loss rate for exposure times of ten hours, the influence of gas temperature and water vapor partial pressure on weight loss rate was examined, and the amount of recession under gas turbine conditions was calculated.

Copper Films Prepared by Metal Organic Chemical Vapor Deposition (MOCVD) Process Using Copper (Acetylacetonate) and Water Vapor as Reactants: The Impact of Water Vapor

1992 ◽  
Vol 282 ◽  
Author(s):  
Yu-Neng Chang
Keyword(s):  
Water Vapor ◽  
Partial Pressure ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Gas Flow Rate ◽  
Cu Films ◽  
Metal Organic ◽  
Carrier Gas Flow ◽  
Organic Chemical Vapor Deposition

ABSTRACTBy using the strong reductive potential of copper acetylacetone (Cu(acac)2) when Cu(acac)2) was thermally decomposed, copper metal films were prepared by metal organic chemical vapor deposition (MOCVD) process using sublimed Cu(acac)2 vapor and water vapor as reactants, at one atmosphere pressure. According to thermodynamic calculations, Cu films could be prepared by MOCVD process with a high ratio of partial pressures for water vapor and Cu(acac)2 vapor (PH2O/Pcu(acac)2>30) In this paper, the impacts of MOCVD processing parameters such as watervapor partial pressure, total carrier gas flow rate, and precursor partial pressure on film composition and microstructure were investigated. Deposition temperature is the primary processing parameter affecting film stoichiometry. In a specific deposition temperature window, from 370°C to 400°C, polycrystalline Cu films with Cu [111] preferential orientation were deposited. ER and XRD results indicated that films deposited at temperature lower than 350°C contain copper oxide phase with poor crystal structure. By comparing the values of X-ray Auger Electron Spectroscopy (XAES) and Auger parameter (αAu) from photoelectrons of Cu films and standards from reference compounds, die principle oxidation state of copper in these films was determined as Cu(0). The deposition results indicated that a water vapor partial pressure above 10 torr is necessary to produce Cu films. As indicated by SEM, Increasing the carrier gas flow rate, above 600 sccm, can reduce the average temperature profile in the thermal boundary layer above the substrate surface, retard the gas phase reaction rate, presumably eliminate the homogeneous nucleation, and deposit smooth Cu films.

Fractional Factorial Study of HCN Removal over a 0.5% Pt/Al2O3Catalyst:  Effects of Temperature, Gas Flow Rate, and Reactant Partial Pressure

2006 ◽  
Vol 45 (3) ◽  
pp. 934-939 ◽  
Author(s):  
Haibo Zhao ◽  
Russell G. Tonkyn ◽  
Stephan E. Barlow ◽  
Charles H. F. Peden ◽  
Bruce E. Koel
Keyword(s):  
Partial Pressure ◽  
Flow Rate ◽  
Gas Flow ◽  
Fractional Factorial ◽  
Gas Flow Rate ◽  
Effects Of Temperature

The Effect of Water-Vapor Content and Gas Flow Rate on the Oxidation Mechanism of a 10%Cr-Ferritic Steel in Ar-H2O Mixtures

2005 ◽  
Vol 63 (5-6) ◽  
pp. 401-422 ◽  
Author(s):  
J. Żurek ◽  
M. Michalik ◽  
F. Schmitz ◽  
T. -U. Kern ◽  
L. Singheiser ◽  
...  
Keyword(s):  
Water Vapor ◽  
Flow Rate ◽  
Ferritic Steel ◽  
Gas Flow ◽  
Oxidation Mechanism ◽  
Water Vapor Content ◽  
Gas Flow Rate ◽  
Effect Of Water

In Situ Optical Diagnostics for Measurements of Water Vapor Partial Pressure in a PEM Fuel Cell

2005 ◽  
Vol 3 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Saptarshi Basu ◽  
Hang Xu ◽  
Michael W. Renfro ◽  
Baki M. Cetegen
Keyword(s):  
Water Vapor ◽  
Fuel Cell ◽  
Partial Pressure ◽  
Pem Fuel Cell ◽  
Membrane Electrode ◽  
Flow Channels ◽  
Vapor Partial Pressure ◽  
Temperature And Humidity ◽  
Water Vapor Partial Pressure

A fiber optic coupled diode laser sensor has been constructed for in situ measurements of water vapor partial pressure in active proton-exchange membrane (PEM) fuel cell systems. The bipolar plate of a prototypical PEM fuel cell was modified to allow for transmission of a near infrared laser beam through the flow channels on either the fuel or oxidizer side of its membrane-electrode assembly. The laser wavelength was scanned over several water rotational and vibrational transitions and the light absorption was detected by measuring the transmitted laser power through the device. The intensity and line shape of the measured transition was used to extract path-averaged values for the water vapor partial pressure. Measurements were initially taken in a non-operating cell with known temperature and humidity input gas streams to calibrate and test the optical device. A technique for rapid determination of the water partial pressure was developed. The optical technique is applicable over a significant temperature and humidity operating range of a PEM fuel cell. The measurement technique was applied to an operating PEM fuel cell system to examine the effects of incoming gas humidity and load on the water vapor partial pressure variation in one of the flow channels.

Discussion on microstructure of chemical-vapor-deposited TiN films based on the calculated gaseous concentration distribution in the reactor

1995 ◽  
Vol 10 (11) ◽  
pp. 2801-2807 ◽  
Author(s):  
Noboru Yoshikawa ◽  
Atsushi Kikuchi
Keyword(s):  
Partial Pressure ◽  
Flow Rate ◽  
Gas Flow ◽  
Tubular Reactor ◽  
Chemical Vapor ◽  
Axial Direction ◽  
Preferred Orientation ◽  
Upstream Region ◽  
Gas Flow Rate ◽  
Tin Films

TiN films were ehemical-vapor-deposited on the inner wall of a tubular reactor. Films deposited in the upstream region of the reactor consisted of small and sharp crystals with (111)-preferred orientation or random orientation. On the other hand, films deposited in the downstream region or at lower partial pressure of TiCl4 consisted of columnar crystals with (110)-preferred orientation, having polyhedral shapes on the surface. For the films deposited under different conditions at different axial positions, relationships were investigated among the temperature, the calculated concentrations on the substrate, and the degree of preferred orientation of the films. As a result, it was shown that formation of films with (110)-preferred orientation is related to the conditions of high temperature and low partial pressure of TiCl4. Films deposited at the higher gas flow rate had lower degrees of (110)-preferred orientation. Decrease in partial pressure of TiCl4 along the axial direction in the reactor was calculated to be smaller at higher gas flow rate, and provided suitable conditions for deposition of films having small and sharp crystals.

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