Effects of ZnO buffer layer on the luminous properties of thin-film phosphors deposited on ZnO/ITO/glass substrates

2001 ◽  
Vol 19 (4) ◽  
pp. 1095-1098 ◽  
Author(s):  
Young Jin Kim ◽  
Sung Mook Chung ◽  
Young Ho Jeong ◽  
Yong Eui Lee
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Glass Substrates ◽  
Ito Glass ◽  
Zno Buffer Layer

Mechanisms of ZnO buffer layer in bottom gate ZnO:Al transparent thin film transistors

2012 ◽  
Vol 134 (2-3) ◽  
pp. 1203-1207 ◽  
Author(s):  
Yung-Hao Lin ◽  
Hsin-Ying Lee ◽  
Ching-Ting Lee ◽  
Cheng-Hsu Chou
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Thin Film Transistors ◽  
Zno Buffer Layer ◽  
Bottom Gate

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

2010 ◽  
Vol 256 (22) ◽  
pp. 6834-6837 ◽  
Author(s):  
Te-Wei Chiu ◽  
Kazuhiko Tonooka ◽  
Naoto Kikuchi
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Glass Substrates ◽  
Zno Buffer Layer ◽  
Vo2 Thin Films

Effect of the thickness of the ZnO buffer layer on the properties of electrodeposited p-Cu2O/n-ZnO/n-AZO heterojunctions

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68663-68674 ◽  
Author(s):  
Halla Lahmar ◽  
Amor Azizi ◽  
Guy Schmerber ◽  
Aziz Dinia
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Zno Film ◽  
Heterojunction Solar Cells ◽  
Transparent Conducting ◽  
Azo Thin Film ◽  
Doped Zno ◽  
Zno Buffer Layer

Transparent conducting Cu2O/non-doped ZnO/Al-doped ZnO/FTO heterojunction solar cells were fabricated by a three-step electrodeposition; with non-doped ZnO film as a buffer layer between-AZO thin film and p-Cu2O nanostructure.

An efficient urea biosensor based on laser ablated ZnO thin film

2013 ◽  
Vol 1530 ◽  
Author(s):  
Neha Batra ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
High Electron ◽  
Zno Thin Film ◽  
Detection Range ◽  
Response Characteristics ◽  
Glass Substrates ◽  
Enhanced Sensitivity ◽  
Ito Glass ◽  
The Matrix

ABSTRACTZinc oxide (ZnO) thin film deposited onto indium tin oxide (ITO) coated Corning glass substrates using pulsed laser deposition (PLD) technique has been used as a matrix for realization of an efficient urea biosensor after immobilization of urease (Urs) enzyme onto the surface of ZnO. The bioelectrode (Urs/ZnO/ITO/glass) is found to be exhibiting an enhanced sensitivity of 22μΑmΜ−1cm−2 towards urea over a wide detection range of 5-200 mg/dl. The relatively low value of Michaelis menten constant (Km= 0.94mM) indicates high affinity of the immobilized urease towards the analyte (urea). The prepared biosensor retains 90% of its activity for more than 10 weeks. The observed enhanced response characteristics of bioelectrode are attributed to the growth of the matrix (highly c-axis oriented ZnO thin film) with desired surface morphology and high electron communication feature. The results confirm the promising application of PLD grown ZnO thin film as an efficient matrix for urea detection.

Magnetron sputtered ZnO buffer layer for Sb2Se3 thin film solar cells

2017 ◽  
Vol 172 ◽  
pp. 74-81 ◽  
Author(s):  
Xixing Wen ◽  
Yisu He ◽  
Chao Chen ◽  
Xinsheng Liu ◽  
Liang wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Thin Film Solar Cells ◽  
Zno Buffer Layer

PH SENSITIVITY DEPENDENCY ON THE ANNEALING TEMPERATURE OF SPIN-COATED TITANIUM DIOXIDE THIN FILMS

2016 ◽  
Vol 78 (5-8) ◽  
Author(s):  
Khairul Aimi Yusof ◽  
Rohanieza Abdul Rahman ◽  
Muhammad AlHadi Zulkefle ◽  
Sukreen Hana Herman ◽  
Wan Fazlida Hanim Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Titanium Dioxide ◽  
Indium Tin Oxide ◽  
Ph Sensor ◽  
Tio2 Thin Films ◽  
Glass Substrates ◽  
Ito Glass ◽  
Ito Thin Films ◽  
Sensing Membrane

Titanium dioxide (TiO2) thin films were fabricated on indium tin oxide (ITO) glass substrates using the spin coating technique and further were implemented as sensing membranes of the extended gate field effect transistor (EGFET) based pH sensor. The as-deposited thin films were annealed at different temperatures from 200 - 600 °C in room ambient for 20 min. The effects of different annealing temperatures on electrical and crystalline properties were analyzed by I-V two point probes measurement and X-ray diffraction respectively. Meanwhile, the surface morphology of thin films was observed by field emission scanning electron microscope (FESEM). We then measured the transfer characteristics (ID-VG) of the TiO2/ITO sensing membrane using a semiconductor parametric device analyzer for sensor characterization. It was found that, TiO2/ITO sensing membrane annealed at 300 °C achieved higher sensitivity and good linearity of 51.48 mV/pH and 0.99415, respectively in the pH buffer solutions of 4, 7, 10, and 12. Thin film annealed at 300 °C gives higher conductivity thin film of 384.62 S/m. We found that the conductivity of TiO2/ITO thin films was proportional with the sensitivity of sensing membrane.  

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