Plasma polymerization and deposition of linear, cyclic and aromatic fluorocarbons on (100)-oriented single crystal silicon substrates

Adsorption of carbon monoxide (CO) molecules on ytterbium nanofilms with the thickness of 16 – 200 monolayers (6.1 – 76 nm) has been studied. The films are grown on single-crystal silicon substrates with the (111) surface orientation. It is shown that before the adsorption of CO molecules, ytterbium is divalent with the electronic configuration of [Xe]4f146s2. Upon the adsorption of gas molecules, a layer of trivalent ytterbium (the electronic configuration is [Xe]4f135d16s2), which is adjacent to the film surface, is formed. Evaluations of the thickness of the layer modified by adsorbed CO molecules are performed. Such evaluations have given rise to the values within 9 – 22 monolayers (3.4 – 8.4 nm).

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Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma

Journal of Applied Physics ◽

10.1063/1.1586957 ◽

2003 ◽

Vol 94 (3) ◽

pp. 1969-1974 ◽

Cited By ~ 56

Author(s):

Ameya Bapat ◽

Christopher R. Perrey ◽

Steven A. Campbell ◽

C. Barry Carter ◽

Uwe Kortshagen

Keyword(s):

Single Crystal ◽

Inductively Coupled Plasma ◽

Silicon Nanoparticles ◽

Single Crystal Silicon ◽

Low Pressure ◽

Crystal Silicon ◽

Inductively Coupled ◽

Oriented Single Crystal

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Shallow Contact Formation of Gadolinium Silicide

MRS Proceedings ◽

10.1557/proc-25-39 ◽

1983 ◽

Vol 25 ◽

Cited By ~ 1

Author(s):

I. C. Cheng ◽

S. S. Lau ◽

R. D. Thompson ◽

K. N. Tu

Keyword(s):

Heat Treatment ◽

Single Crystal ◽

Schottky Barrier Height ◽

Single Crystal Silicon ◽

Atomic Ratio ◽

Silicon Substrates ◽

Formation Temperature ◽

Crystal Silicon ◽

Contact Formation ◽

Convenient Technique

ABSTRACTGadolinium silicide with its attractive features of low formation temperature of about 350°C and low Schottky barrier height on n-type single-crystal silicon substrates (ϕnB1∼O.4ev,ϕpB ∼ 0.7ev) was chosen for studying the feasibility of forming shallow uniform contacts. Samples with various compositions prepared by both bilayer evaporation with a configuration of Si(α)/Gd/Si(xtl) and coevaporation with a Si−Gd /Si(xtl)structure were used for studying the contact formation as a function of composition and heat treatment. We found that shallow contact formation can be achieved provided that the following conditions are met: (a) for bilayer evaporation, the atomic ratio of Si(α)/Gd ≥ 2 should be maintained, (b) for coevaporation, the Si to Gd atomic ratio between 1.7 and 2.0 is desired. The bilayer deposition scheme appears to be a more convenient technique to use in practice.

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Silicon Layers Grown on Patterned Substrates by Liquid Phase Epitaxy

MRS Proceedings ◽

10.1557/proc-54-267 ◽

1985 ◽

Vol 54 ◽

Cited By ~ 15

Author(s):

E. Bauser ◽

D. KÄss ◽

M. Warth ◽

H. P. Strunk

Keyword(s):

Liquid Phase ◽

Single Crystal ◽

Liquid Phase Epitaxy ◽

Single Crystal Silicon ◽

Growth Conditions ◽

Silicon Substrates ◽

Crystal Silicon ◽

Surfaces And Interfaces ◽

Lateral Overgrowth ◽

Via Holes

ABSTRACTSingle-crystal silicon layers and doping multilayers have been grown by liquid phase qpitaxy on silicon substrates. The substrates were either partially masked by SiO2, with via holes of various shapes and sizes, or patterned with SiO2 stripes, or profiled with grooves and ridges. The via holes and grooves were just refilled, or they acted as seeding areas for lateral overgrowth of the oxidized wafer up to 100μm. The silicon layers, interfaces and heterointerfaces were free of defects. With appropriate growth conditions the surfaces and interfaces of the epitaxial Si were outstandingly planar.

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