Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm

2004 ◽  
Vol 22 (3) ◽  
pp. 1463 ◽  
Author(s):  
Jun-Xian Fu ◽  
Seth R. Bank ◽  
Mark A. Wistey ◽  
Homan B. Yuen ◽  
James S. Harris
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Single Quantum ◽  
Peak Wavelength ◽  
Single Quantum Well ◽  
Photoluminescence Peak

Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy

1996 ◽  
Vol 11 (8) ◽  
pp. 1185-1188 ◽  
Author(s):  
A N Baranov ◽  
Y Cuminal ◽  
G Boissier ◽  
J C Nicolas ◽  
J L Lazzari ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate
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