Feedback control of chlorine inductively coupled plasma etch processing

2005 ◽  
Vol 23 (2) ◽  
pp. 281-287 ◽  
Author(s):  
Chaung Lin ◽  
Keh-Chyang Leou ◽  
Kai-Mu Shiao
Keyword(s):  
Feedback Control ◽  
Inductively Coupled Plasma ◽  
Plasma Etch ◽  
Inductively Coupled

Simulations of a Feedback Control Scheme for an Inductively Coupled Plasma Source for Etching Applications

1996 ◽  
Vol 143 (4) ◽  
pp. 1375-1383 ◽  
Author(s):  
Naoki Yamada ◽  
Peter L. G. Ventzek ◽  
Y. Sakai ◽  
H. Tagashira ◽  
K. Kitamori
Keyword(s):  
Feedback Control ◽  
Inductively Coupled Plasma ◽  
Plasma Source ◽  
Inductively Coupled ◽  
Control Scheme

Fabrication and repair of GaN nanorods by plasma etching with self-assembled nickel nanomasks

2021 ◽  
Author(s):  
Shiying Zhang ◽  
Lei Zhang ◽  
Yueyao Zhong ◽  
Guodong Wang ◽  
Qingjun Xu
Keyword(s):  
Inductively Coupled Plasma ◽  
Average Diameter ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Self Organized ◽  
Gan Film ◽  
Koh Etching

High crystal quality GaN nanorod arrays were fabricated by inductively coupled plasma (ICP) etching using self-organized nickel (Ni) nano-islands mask on GaN film and subsequent repaired process including annealing in ammonia and KOH etching. The Ni nano-islands have been formed by rapid thermal annealing, whose density, shape, and dimensions were regulated by annealing temperature and Ni layer thickness. The structural and optical properties of the nanorods obtained from GaN epitaxial layers were comparatively studied by high-resolution X-ray diffraction (HRXRD), Raman spectroscopy and photoluminescence (PL). The results indicate that damage induced by plasma can be successfully healed by annealing in NH3 at 900 °C. The average diameter of the as-etched nanorod was effectively reduced and the plasma etch damage was removed after a wet treatment process in a KOH solution. It was found that the diameter of the GaN nanorod was continuously reduced and the PL intensity first increased, then reduced and finally increased as the KOH etching time sequentially increased.

Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations

2003 ◽  
Vol 42 (Part 1, No. 7A) ◽  
pp. 4207-4212 ◽  
Author(s):  
Chao-Yi Fang ◽  
Weng-Jung Huang ◽  
Edward Yi Chang ◽  
Chia-Feng Lin ◽  
Ming-Shiann Feng
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Contact ◽  
Plasma Etch ◽  
Inductively Coupled ◽  
Wet Etch

Real-time control of ion density and ion energy in chlorine inductively coupled plasma etch processing

2003 ◽  
Vol 21 (4) ◽  
pp. 1183-1187 ◽  
Author(s):  
Cheng-Hung Chang ◽  
Keh-Chyang Leou ◽  
Chaung Lin ◽  
Tsan-Lang Lin ◽  
Chih-Wei Tseng ◽  
...  
Keyword(s):  
Real Time ◽  
Inductively Coupled Plasma ◽  
Real Time Control ◽  
Plasma Etch ◽  
Ion Density ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Time Control

Inductively Coupled Plasma Etch Damage in GaAs and InP Schottky Diodes

1997 ◽  
Vol 144 (4) ◽  
pp. 1417-1422 ◽  
Author(s):  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Schottky Diodes ◽  
Plasma Etch ◽  
Inductively Coupled
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