Characterization of Europium Doped Silicon Oxide, Silicon Oxynitride, and Silicon Nitride Films Prepared By Integrated Ecr-PECVD and Magnetron Sputtering

2020 ◽  
Vol MA2020-01 (52) ◽  
pp. 2934-2934
Author(s):  
Fahmida Azmi ◽  
Yuxuan Gao ◽  
Zahra Khatami ◽  
Peter Mascher
Keyword(s):  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Silicon Oxide ◽  
Silicon Oxynitride ◽  
Silicon Nitride Films ◽  
Doped Silicon

STructure and Optical Characterization of Silicon Nitride Films Deposited Byr.F. Magnetron Sputtering

2008 ◽  
pp. 1185-1188
Author(s):  
Jia Xiaoyun ◽  
Xu Zheng ◽  
Tang Yu ◽  
Zhou Chunlan ◽  
Wang Wenjing ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Optical Characterization ◽  
Silicon Nitride Films

scholarly journals Characterization of silicon nitride films prepared by MW-ECR magnetron sputtering

2006 ◽  
Vol 55 (3) ◽  
pp. 1363
Author(s):  
Ding Wan-Yu ◽  
Xu Jun ◽  
Li Yan-Qin ◽  
Piao Yong ◽  
Gao Peng ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Magnetron Sputtering ◽  
Silicon Nitride Films

Characterization of methyl-doped silicon oxide film deposited using Flowfill™ chemical vapor deposition technology

2002 ◽  
Vol 20 (3) ◽  
pp. 828 ◽  
Author(s):  
Hongqiang Lu ◽  
Hao Cui ◽  
Ishwara Bhat ◽  
Shyam Murarka ◽  
Williams Lanford ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Film ◽  
Vapor Deposition ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxide Film ◽  
Doped Silicon ◽  
Deposition Technology

Fabrication and surface characterization of pulsed reactive closed-field unbalanced magnetron sputtered amorphous silicon nitride films

2006 ◽  
Vol 200 (12-13) ◽  
pp. 4144-4151 ◽  
Author(s):  
Zh.Q. Yao ◽  
P. Yang ◽  
N. Huang ◽  
H. Sun ◽  
G.J. Wan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Surface Characterization ◽  
Closed Field ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Unbalanced Magnetron

Room-temperature 1.54 μm electroluminescence from Er-doped silicon-rich silicon oxide films deposited on n+-Si substrates by magnetron sputtering

2001 ◽  
Vol 90 (11) ◽  
pp. 5835-5837 ◽  
Author(s):  
G. Z. Ran ◽  
Y. Chen ◽  
W. C. Qin ◽  
J. S. Fu ◽  
Z. C. Ma ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Si Substrates ◽  
Doped Silicon ◽  
Er Doped

Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

2003 ◽  
pp. 349-354
Author(s):  
Gautam Gundiah ◽  
G. V. Madhav ◽  
A. Govindaraj ◽  
Md. Motin Seikh ◽  
C. N. R. Rao
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Silicon Oxynitride ◽  
Synthesis And Characterization

Fabrication and characterization of Er doped silicon-rich silicon nitride(SRSN) micro-disks

2008 ◽  
Author(s):  
Jee Soo Chang ◽  
Myung-Ki Kim ◽  
Yong-Hee Lee ◽  
Jung H. Shin ◽  
Gun Yong Sung
Keyword(s):  
Silicon Nitride ◽  
Doped Silicon ◽  
Fabrication And Characterization ◽  
Er Doped

In Vivo Biostability of CVD Silicon Oxide and Silicon Nitride Films

2005 ◽  
Vol 872 ◽  
Author(s):  
John M. Maloney ◽  
Sara A. Lipka ◽  
Samuel P. Baldwin
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Silicon Chips ◽  
Silicon Nitride Films

AbstractLow pressure chemical vapor deposition (LPCVD) and plasma enhanced chemical vapor deposition (PECVD) silicon oxide and silicon nitride films were implanted subcutaneously in a rat model to study in vivo behavior of the films. Silicon chips coated with the films of interest were implanted for up to one year, and film thickness was evaluated by spectrophotometry and sectioning. Dissolution rates were estimated to be 0.33 nm/day for LPCVD silicon nitride, 2.0 nm/day for PECVD silicon nitride, and 3.5 nm/day for PECVD silicon oxide. A similar PECVD silicon oxide dissolution rate was observed on a silicon oxide / silicon nitride / silicon oxide stack that was sectioned by focused ion beam etching. These results provide a biostability reference for designing implantable microfabricated devices that feature exposed ceramic films.

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

2007 ◽  
Vol 25 (4) ◽  
pp. 980-985 ◽  
Author(s):  
Y. B. Yun ◽  
S. M. Park ◽  
D. J. Kim ◽  
N.-E. Lee ◽  
K. S. Kim ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Oxide ◽  
Dry Etching ◽  
Silicon Oxynitride ◽  
Oxide Layers ◽  
Injection Methods
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