Impact of channel width and dummy length on performance enhancement in p-type metal oxide semiconductor field effect transistor with a silicon-germanium alloy stressor

2009 ◽  
Vol 27 (3) ◽  
pp. 1256 ◽  
Author(s):  
Chang-Chun Lee ◽  
Jacky Huang ◽  
Shu-Tong Chang ◽  
Wei-Ching Wang
Keyword(s):  
Metal Oxide ◽  
Silicon Germanium ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Performance Enhancement ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Germanium Alloy ◽  
Effect Transistor ◽  
P Type

An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

2001 ◽  
Vol 45 (2) ◽  
pp. 281-285 ◽  
Author(s):  
Xiangdong Chen ◽  
Qiqing Ouyang ◽  
Sankaran Kartik Jayanarayanan ◽  
Freek E. Prins ◽  
Sanjay Banerjee
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
P Type

Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

2012 ◽  
Vol 520 (8) ◽  
pp. 3337-3340 ◽  
Author(s):  
T. Nakashima ◽  
T. Idemoto ◽  
I. Tsunoda ◽  
K. Takakura ◽  
M. Yoneoka ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Radiation Damage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
P Type

Strained Si1-xGex Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor

2000 ◽  
Vol 39 (Part 2, No. 6B) ◽  
pp. L579-L581
Author(s):  
Chia Yi Su ◽  
San Lein Wu ◽  
Shoou Jinn Chang ◽  
Liang Po Chen
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
P Type
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