Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap

2007 ◽  
Vol 91 (23) ◽  
pp. 233505 ◽  
Author(s):  
R. Yang ◽  
Y. Z. Xiong ◽  
W. Y. Loh ◽  
J. D. Ye ◽  
M. B. Yu ◽  
...  
2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  

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