Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap
2006 ◽
Vol 45
(4B)
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pp. 3606-3608
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1991 ◽
Vol 38
(8)
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pp. 1883-1888
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2007 ◽
Vol 23
(2)
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pp. 025002
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2000 ◽
Vol 40
(11)
◽
pp. 1897-1903
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2018 ◽
Vol 57
(4S)
◽
pp. 04FD19
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Keyword(s):
2010 ◽
Vol 49
(8)
◽
pp. 084201
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2001 ◽
Vol 40
(Part 1, No. 9A)
◽
pp. 5290-5293
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1999 ◽
Vol 38
(Part 2, No. 6A/B)
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pp. L629-L631
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Keyword(s):