35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Wataru Saitoh; Shigeharu Yamagami; Atsushi Itoh; Masahiro Asada

doi:10.1143/jjap.38.l629

35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l629 ◽

1999 ◽

Vol 38 (Part 2, No. 6A/B) ◽

pp. L629-L631 ◽

Cited By ~ 16

Author(s):

Wataru Saitoh ◽

Shigeharu Yamagami ◽

Atsushi Itoh ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effect Transistor ◽

P Type

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A 25-nm-long Channel Metal-Gate p-Type Schottky Source/Drain Metal-Oxide-Semiconductor Field Effect Transistor on Separation-by-Implanted-Oxygen Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.4757 ◽

2000 ◽

Vol 39 (Part 1, No. 8) ◽

pp. 4757-4758 ◽

Cited By ~ 24

Author(s):

Atsushi Itoh ◽

Masayuki Saitoh ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effect Transistor ◽

P Type ◽

Long Channel

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Novel Si/SiC Heterojunction Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor with P-type Buried Layer Breaking Silicon Limit

Chinese Physics B ◽

10.1088/1674-1056/abcf45 ◽

2020 ◽

Author(s):

Baoxing Duan ◽

Xin Huang ◽

Haitao Song ◽

Yandong Wang ◽

Yintang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

P Type

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Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

IEEE Electron Device Letters ◽

10.1109/led.2008.2001766 ◽

2008 ◽

Vol 29 (9) ◽

pp. 977-980 ◽

Cited By ~ 30

Author(s):

J. Q. Lin ◽

S. J. Lee ◽

H. J. Oh ◽

G. Q. Lo ◽

D. L. Kwong ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Inversion Mode ◽

Effect Transistor

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Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3457936 ◽

2010 ◽

Vol 28 (4) ◽

pp. 799-801 ◽

Cited By ~ 2

Author(s):

Moongyu Jang ◽

Myungsim Jun ◽

Taehyoung Zyung

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effective Mobility ◽

Effect Transistor ◽

Barrier Metal ◽

P Type

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Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.1520 ◽

2006 ◽

Vol 45 (3A) ◽

pp. 1520-1524

Author(s):

Yao-Jen Lee ◽

Pei-Tsang Ho ◽

Wen-Luh Yang ◽

Tien-Sheng Chao ◽

Tiao-Yuan Huang

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

P Type

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Strain Engineering of Nanoscale Si P-Type Metal-Oxide-Semiconductor Field-Effect Transistor Devices with SiGe Alloy Integrated with Contact-Etch-Stop Layer Stressors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.6278 ◽

2012 ◽

Vol 12 (7) ◽

pp. 5402-5406 ◽

Cited By ~ 3

Author(s):

Chang-Chun Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Strain Engineering ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Etch Stop ◽

Etch Stop Layer ◽

Effect Transistor ◽

P Type

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Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer

Applied Physics Letters ◽

10.1063/1.3330929 ◽

2010 ◽

Vol 96 (8) ◽

pp. 082905 ◽

Cited By ~ 12

Author(s):

W. J. Maeng ◽

Woo-Hee Kim ◽

Ja Hoon Koo ◽

S. J. Lim ◽

Chang-Soo Lee ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Voltage Control ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tio2 Layer ◽

Metal Gate ◽

Effect Transistor ◽

Flatband Voltage

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Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap

Applied Physics Letters ◽

10.1063/1.2819071 ◽

2007 ◽

Vol 91 (23) ◽

pp. 233505 ◽

Cited By ~ 4

Author(s):

R. Yang ◽

Y. Z. Xiong ◽

W. Y. Loh ◽

J. D. Ye ◽

M. B. Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor ◽

P Type

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An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

Solid-State Electronics ◽

10.1016/s0038-1101(01)00013-2 ◽

2001 ◽

Vol 45 (2) ◽

pp. 281-285 ◽

Cited By ~ 2

Author(s):

Xiangdong Chen ◽

Qiqing Ouyang ◽

Sankaran Kartik Jayanarayanan ◽

Freek E. Prins ◽

Sanjay Banerjee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

P Type

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Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

Thin Solid Films ◽

10.1016/j.tsf.2011.10.112 ◽

2012 ◽

Vol 520 (8) ◽

pp. 3337-3340 ◽

Cited By ~ 6

Author(s):

T. Nakashima ◽

T. Idemoto ◽

I. Tsunoda ◽

K. Takakura ◽

M. Yoneoka ◽

...

Keyword(s):

Metal Oxide ◽

Radiation Damage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

P Type

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