Photoluminescence enhancement by rapid thermal annealing for ZnO epitaxial films grown on Si (100) by pulsed laser deposition

2009 ◽  
Vol 27 (5) ◽  
pp. 1231-1234 ◽  
Author(s):  
Q. He ◽  
X. N. Wang ◽  
H. B. Wang ◽  
J. H. Zhu ◽  
Hao Wang ◽  
...  
2020 ◽  
Vol 521 ◽  
pp. 146267 ◽  
Author(s):  
Erieta-Katerina Koussi ◽  
Florent Bourquard ◽  
Teddy Tite ◽  
Damien Jamon ◽  
Florence Garrelie ◽  
...  

1995 ◽  
Vol 401 ◽  
Author(s):  
S. Madhavan ◽  
B. J. Gibbons ◽  
A. Dabkowski ◽  
H. A. Dabkowska ◽  
S. Trolier-Mckinstry ◽  
...  

AbstractEpitaxial films of Sr2RuO4 have been grown in situ by pulsed laser deposition on (100) LaAlO3 and (100) LaSrGaO4 substrates. X-ray diffraction results show that the films are single domain and grow c-axis oriented on (100) LaAlO3 and a-axis oriented on (100) LaSrGaO4 substrates. X-ray ø-scans indicate epitaxial alignment of the film and substrate in-plane axes in both cases. Resistivity versus temperature measurements reveal that the as-grown c-axis oriented films are semiconducting and the a-axis oriented films are metallic. The metallic films grown so far were found to be non-superconducting down to 50 mK.


1993 ◽  
Vol 317 ◽  
Author(s):  
Julia M. Phillips ◽  
R. B. Van Dover ◽  
E. M. Gyorgy ◽  
J. H. Marshall

ABSTRACTWe have grown thin films and multilayers of several ferrite materials with the spinel structure by pulsed laser deposition of stoichiometric targets. Epitaxial films can be grown on a variety of substrates including MgO, Al2O3, MgAl2O4, Y-stabilized ZrO2 (YSZ) and SrTiO3. Films on Mg- and Al-containing substrates have a low saturation Magnetization, Ms, while films on YSZ and SrTiO3 exhibit bulk values of Ms. The anisotropy can be lowered by a post growth anneal, resulting in a film with a permeability of 28.


2013 ◽  
Vol 789 ◽  
pp. 72-75
Author(s):  
Pia Dinari ◽  
Christian Chandra ◽  
Joko Suwardy ◽  
Salim Mustofa ◽  
Yudi Darma

Strontium titanate (SrTiO3) thin film has been deposited on Si (100) substrate using pulsed laser deposition technique. Film deposition was carried out at low temperature (150°C) by maintained the pressure at 10-4 Torr. Nanometer-thick SrTiO3 film on Si substrate was characterized using SEM, AFM, XRD, and Raman Spectroscopy. SEM and AFM images show that SrTiO3 film has growth on Si substrate uniformly. Raman and XRD spectroscopy also support the growth of SrTiO3 film on Si substrate. Furthermore, to investigate the effect of post-deposition thermal annealing, the samples were annealed up to 900°C. Thermal stability of SrTiO3/Si structure was studied by mean XRD spectra. The X-Ray Diffraction pattern indicates the crystallinity improvement through atomic arrangements during thermal annealing process.


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