Effect of reactor pressure on the electrical and structural properties of InN epilayers grown by high-pressure chemical vapor deposition

2012 ◽  
Vol 30 (3) ◽  
pp. 031511 ◽  
Author(s):  
M. K. Indika Senevirathna ◽  
Sampath Gamage ◽  
Ramazan Atalay ◽  
Ananta R. Acharya ◽  
A. G. Unil Perera ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical ◽  
Reactor Pressure

Characterization of InN layers grown by high-pressure chemical vapor deposition

2006 ◽  
Vol 89 (11) ◽  
pp. 112119 ◽  
Author(s):  
M. Alevli ◽  
G. Durkaya ◽  
A. Weerasekara ◽  
A. G. U. Perera ◽  
N. Dietz ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics

APL Materials ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 046105 ◽  
Author(s):  
Xiaoyu Ji ◽  
Hiu Yan Cheng ◽  
Alex J. Grede ◽  
Alex Molina ◽  
Disha Talreja ◽  
...  
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Conformal Coating ◽  
Pressure Chemical ◽  
Silicon And Germanium

High-pressure chemical vapor deposition for preparation of carbon

Carbon ◽  
1995 ◽  
Vol 33 (2) ◽  
pp. 183-191 ◽  
Author(s):  
N. Nakao ◽  
K. Kitagawa ◽  
M. Sasaki ◽  
T. Hirai
Keyword(s):  
High Pressure ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Pressure Chemical

Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

2012 ◽  
Vol 711 ◽  
pp. 61-65 ◽  
Author(s):  
Sai Jiao ◽  
Marc Portail ◽  
Jean François Michaud ◽  
Marcin Zielinski ◽  
Thierry Chassagne ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Growth Conditions ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Micro Electro Mechanical Systems ◽  
Pressure Chemical

The growth of continuous silicon monocrystalline thin films on 3C-SiC epilayers deposited on silicon substrates is presented in this study. Such heterostructures can be beneficial for the fabrication of Micro Electro Mechanical Systems or electronic applications. The elaboration of these heterostructures was carried out using Low Pressure Chemical Vapor Deposition. X-ray Diffraction, Fourier Transformed Infra-Red spectroscopy and Scanning Electron Microscopy have been used to investigate the structural properties of Si epilayers and their dependence on growth conditions. Monocrystalline Si (110) films are obtained on 3CSiC(100)/Si (100) substrates, only when using growth temperatures close to 850°C. The strong influence of the underlying 3C-SiC film on the final structural properties of Si epilayer is evidenced.

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