Elaboration of Monocrystalline Si Thin Film on 3C-SiC(100)/Si Epilayers by Low Pressure Chemical Vapor Deposition

The growth of continuous silicon monocrystalline thin films on 3C-SiC epilayers deposited on silicon substrates is presented in this study. Such heterostructures can be beneficial for the fabrication of Micro Electro Mechanical Systems or electronic applications. The elaboration of these heterostructures was carried out using Low Pressure Chemical Vapor Deposition. X-ray Diffraction, Fourier Transformed Infra-Red spectroscopy and Scanning Electron Microscopy have been used to investigate the structural properties of Si epilayers and their dependence on growth conditions. Monocrystalline Si (110) films are obtained on 3CSiC(100)/Si (100) substrates, only when using growth temperatures close to 850°C. The strong influence of the underlying 3C-SiC film on the final structural properties of Si epilayer is evidenced.

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Growth of hexagonal boron nitride films on silicon substrates by low-pressure chemical vapor deposition

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-05116-6 ◽

2021 ◽

Author(s):

Xi Chen ◽

Chunbo Tan ◽

Xiaohang Liu ◽

Kairan Luan ◽

Yufeng Guan ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Boron Nitride ◽

Vapor Deposition ◽

Hexagonal Boron Nitride ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Substrates ◽

Pressure Chemical ◽

Boron Nitride Films

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Influence of Surface Organic Contamination on the Incubation Time in Low-Pressure Chemical Vapor Deposition of Silicon Nitride on Silicon Substrates

MRS Proceedings ◽

10.1557/proc-477-379 ◽

1997 ◽

Vol 477 ◽

Author(s):

Koichiro Saga ◽

Takeshi Hattori

Keyword(s):

Chemical Vapor Deposition ◽

Silicon Nitride ◽

Incubation Time ◽

Vapor Deposition ◽

Organic Contaminants ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Nitride Film ◽

Silicon Substrates ◽

Pressure Chemical

ABSTRACTTrace organic contaminants adsorbing on silicon surfaces during transportation of wafers to a reaction chamber in an air ambient cause incubation before film growth starts in low-pressure chemical vapor deposition (LPCVD) of silicon nitride film on silicon substrates. The incubation time for wafers either exposed to cleanroom air for a long period without being stored in a box or stored in an outgassing plastic box prior to LPCVD is longer than that for wafers transported to the CVD reactor immediately after the previous step. It has been found that the longer incubation time is attributed to not only extraneous oxide grown on the silicon surface but also organic contaminants adsorbed on the surface.

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Structural and Optical Analysis of GaN Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.517.5 ◽

2006 ◽

Vol 517 ◽

pp. 5-8

Author(s):

F.K. Yam ◽

Hassan Zainuriah ◽

Abu Hassan Haslan ◽

M.E. Kordesch

Keyword(s):

Chemical Vapor Deposition ◽

Raman Scattering ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Phonon Mode ◽

Chemical Vapor ◽

Low Pressure ◽

Growth Conditions ◽

X Ray Diffraction ◽

Metalorganic Chemical

This paper presents an analysis of the characteristics of two gallium nitride (GaN) films grown on (0001) plane sapphire substrates by low-pressure metalorganic chemical vapor deposition (MOCVD) is presented. The GaN films were characterized by a variety of methods, including scanning electron microscopy (SEM), x-ray diffraction (XRD), photoluminescence (PL), and Raman scattering. SEM micrographs revealed that different growth conditions will lead to different surface morphology of the films. XRD measurements indicated that both films were highly oriented and mono crystalline. PL spectra for both samples exhibited an intense and sharp band edge peak at 3.42 eV with full width at half maximum (FWHM) of 15 and 35 meV respectively. Raman scattering showed that the peaks of E2(high) phonon mode were observed at 568.1 and 570.1 cm-1 respectively. The different growth mode of these films were linked to the growth conditions, in which the growth mechanism could be correlated with the shift of E2(high) phonon mode in Raman scattering.

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