Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier

2015 ◽  
Vol 33 (5) ◽  
pp. 05E111 ◽  
Author(s):  
Hyunjung Kim ◽  
Jingyu Park ◽  
Heeyoung Jeon ◽  
Woochool Jang ◽  
Hyeongtag Jeon ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Remote Plasma ◽  
Layer Deposition ◽  
Cu Diffusion Barrier

Atomic Layer Deposition of Ultrathin TaN and Ternary Ta1-XAlXNy Films for Cu Diffusion Barrier Applications in Advanced Interconnects

2015 ◽  
Vol 69 (7) ◽  
pp. 181-189 ◽  
Author(s):  
S. Consiglio ◽  
K. Yu ◽  
S. Dey ◽  
K. Tapily ◽  
R. D. Clark ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cu Diffusion Barrier

Atomic layer deposition of amorphous Ni-Ta-N films for Cu diffusion barrier

2018 ◽  
Vol 36 (3) ◽  
pp. 031502
Author(s):  
Yong-Ping Wang ◽  
Zi-Jun Ding ◽  
Bao Zhu ◽  
Wen-Jun Liu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cu Diffusion Barrier

Deposition and Characteristics of Tantalum Nitride films by Plasma Assisted Atomic Layer Deposition as Cu Diffusion Barrier

2003 ◽  
Vol 766 ◽  
Author(s):  
Kyoung-Il Na ◽  
Se-Jong Park ◽  
Woo-Cheol Jeong ◽  
Se-Hoon Kim ◽  
Sung-Eun Boo ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Oxygen ◽  
Atomic Layer ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Cu Diffusion Barrier ◽  
The Stability ◽  
Oxygen Impurities

AbstractFor a diffusion barrier against Cu, tantalum nitride (TaN) films have been successfully deposited by both conventional thermal atomic layer deposition (ALD) and plasma assisted atomic layer deposition (PAALD), using pentakis (ethylmethlyamino) tantalum (PEMAT) and ammonia (NH3) as precursors. The growth rate of PAALD TaN at substrate temperature 250° was slightly higher than that of ALD TaN (0.80 Å/cycle for PAALD and 0.75 Å/cycle for ALD). Density of TaN films deposited by PAALD was as high as 11.0 g/cm3, considerably higher compared to the value of 8.3 g/cm3 obtained by ALD. The N: Ta ratio for ALD TaN was 44: 37 in composition and the film contained approximately 8∼10 atomic % carbon and 11 atomic % oxygen impurities. On the other hand, the ratio for PAALD TaN layers was 47: 44 and the respective carbon and oxygen contents of TaN layers decreased to 3 atomic % and 4 atomic %. The stability of 10 nm-thick TaN films as a Cu diffusion barrier was tested through thermal annealing for 30 minutes in N2 ambient and characterized by XRD, which proves the PAALD deposited TaN film to maintain better barrier properties against Cu below 800°.

Atomic layer deposition of WNx thin films using a F-free tungsten metal-organic precursor and NH3 plasma as a Cu-diffusion barrier

2019 ◽  
Vol 685 ◽  
pp. 393-401 ◽  
Author(s):  
Jun Beom Kim ◽  
Dip K. Nandi ◽  
Tae Hyun Kim ◽  
Yujin Jang ◽  
Jong-Seong Bae ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Organic Precursor ◽  
Layer Deposition ◽  
Metal Organic ◽  
Cu Diffusion Barrier ◽  
Tungsten Metal

Low Temperature Two-Step Atomic Layer Deposition of Tantalum Nitride for Cu Diffusion Barrier

2009 ◽  
Vol 156 (11) ◽  
pp. H832 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Seong-Jun Jeong ◽  
Jae-Wook Kang ◽  
Do-Geun Kim ◽  
Jong-Kuk Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Layer Deposition ◽  
Cu Diffusion Barrier

Hydrogen-plasma-assisted hybrid atomic layer deposition of Ir thin film as novel Cu diffusion barrier

2012 ◽  
Vol 211 ◽  
pp. 14-17 ◽  
Author(s):  
Sang In Song ◽  
Jong Ho Lee ◽  
Bum Ho Choi ◽  
Hong Kee Lee ◽  
Dong Chan Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Diffusion Barrier ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Cu Diffusion Barrier
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