scholarly journals Synthesis of hydrogenated diamondlike carbon thin films using neon–acetylene based high power impulse magnetron sputtering discharges

2016 ◽  
Vol 34 (6) ◽  
pp. 061504 ◽  
Author(s):  
Asim Aijaz ◽  
Sascha Louring ◽  
Daniel Lundin ◽  
Tomáš Kubart ◽  
Jens Jensen ◽  
...  
2017 ◽  
Vol 60 (9) ◽  
pp. 341-345
Author(s):  
Norio NAWACHI ◽  
Koichi ITOH ◽  
Yosuke ISAGI ◽  
Yoshiaki YOSHIDA ◽  
Keishi OKAMOTO ◽  
...  

2015 ◽  
Vol 18 (3) ◽  
pp. 28-34
Author(s):  
Lam Xuan Bui

This paper presents studies on the friction and wear of diamond-like carbon thin films deposited on steel substrates via magnetron sputtering. The testing mode is ball-on-disc. The graphitization of diamondlike carbon during the tribotest explains the low coefficients of friction (0,09-0,15) observed. The bias voltage plays an important role on the film’s microstructure thus the friction and wear of the films in tribotests. The results showed great potential for applications of diamond-like carbon thin films in engineering.


2017 ◽  
Vol 72 ◽  
pp. 71-76 ◽  
Author(s):  
A. Wiatrowski ◽  
W. Kijaszek ◽  
W.M. Posadowski ◽  
W. Oleszkiewicz ◽  
J. Jadczak ◽  
...  

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.


2004 ◽  
Vol 180-181 ◽  
pp. 218-221 ◽  
Author(s):  
Yong Seob Park ◽  
Hyun Sik Myung ◽  
Jeon Geon Han ◽  
Byungyou Hong

2015 ◽  
Vol 33 (2) ◽  
pp. 021518 ◽  
Author(s):  
Milena A. Moreira ◽  
Tobias Törndahl ◽  
Ilia Katardjiev ◽  
Tomas Kubart

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