Abstract
In 3D NAND, as the stack number increases, the process cost becomes higher and higher, and the stress problem becomes more and more serious. Therefore, the low cost and low stress plasma enhanced Tetraethyl orthosilicate (PE TEOS), compared to high density plasma (HDP) oxide, shows its superiority as pre-metal dielectric (PMD) oxide layer in 3D NAND. This paper explores the challenges in the application of PE TEOS in 3D NAND PMD oxide layer.In our experiments, both PE TEOS and HDP are employed as the PMD oxide for 3D NAND staircase protection. There is not any void found in the two oxide structures. However, oxide pitting is spotted in the subsequent diluted hydrofluoric acid wet etching in the PE TEOS split. Moreover, we observe that the top silicon nitride corrodes in hot phosphoric acid. We investigate the mechanism of PE TEOS oxide pitting and silicon nitride corroding, and propose two solutions: 1) HDP oxide + PE TEOS, and 2) PE TEOS + dry etching.Experimental results demonstrate that our solutions can well address the issue of PE TEOS oxide pitting and effectively protect the staircase structure. This work extends the application of PE TEOS oxide of which the cost and the stress are both low in 3D NAND.
Hydrogen and Alkali Ion Sensing Properties of Ion Implanted Silicon Nitride Thin Film