Performance of an ultrahigh‐vacuum sample transfer system for investigation of molecular‐beam epitaxy grown semiconductor surfaces

1993 ◽  
Vol 11 (5) ◽  
pp. 2860-2862 ◽  
Author(s):  
X.‐S. Wang ◽  
C. Huang ◽  
V. Bressler‐Hill ◽  
R. Maboudian ◽  
W. H. Weinberg
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Semiconductor Surfaces ◽  
Transfer System ◽  
Sample Transfer

Aluminum alloy ultrahigh vacuum system for molecular beam epitaxy

1986 ◽  
Vol 4 (6) ◽  
pp. 2515-2519 ◽  
Author(s):  
M. Miyamoto ◽  
Y. Sumi ◽  
S. Komaki ◽  
K. Narushima ◽  
H. Ishimaru
Keyword(s):  
Aluminum Alloy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Vacuum System

Ultrahigh vacuum arcjet nitrogen source for selected energy epitaxy of group III nitrides by molecular beam epitaxy

1998 ◽  
Vol 16 (3) ◽  
pp. 1615-1620 ◽  
Author(s):  
F. J. Grunthaner ◽  
R. Bicknell-Tassius ◽  
P. Deelman ◽  
P. J. Grunthaner ◽  
C. Bryson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Nitrogen Source ◽  
Molecular Beam ◽  
Ultrahigh Vacuum ◽  
Group Iii Nitrides ◽  
Group Iii
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