Control of radio‐frequency‐plasma process to improve the reproducibility of silicon oxynitride thin film preparation

1995 ◽  
Vol 13 (4) ◽  
pp. 2099-2104 ◽  
Author(s):  
D. M. Diatezua ◽  
P. A. Thiry ◽  
R. Caudano
2006 ◽  
Vol 301 ◽  
pp. 95-98 ◽  
Author(s):  
Masashi Yamashita ◽  
Yukari Ishikawa ◽  
Hitoshi Ohsato ◽  
Noriyoshi Shibata

An AlBN thin film with a boron content (B/(Al+B)) of 0.1 or 0.3 was obtained by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) using EB-guns as group-III element sources and an RF radical source for nitrogen supply. We compared the characteristics of the film with those of AlN and BN films. By reflective high-energy electron diffraction (RHEED), we observed ring patterns in the AlBN film. The X-ray photoelectron spectroscopy (XPS) N1s peak of the AlBN film was observed at a binding energy between the peaks of AlN and BN. There was no evidence for phase separation in the film.


2019 ◽  
Vol 358 ◽  
pp. 91-97 ◽  
Author(s):  
Marjan Shahpanah ◽  
Somayeh Mehrabian ◽  
Marzieh Abbasi-Firouzjah ◽  
Babak Shokri

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