Crystallographic and microstructural studies of BaTiO3 thin films grown on SrTiO3 by laser molecular beam epitaxy

1997 ◽  
Vol 15 (2) ◽  
pp. 275-278 ◽  
Author(s):  
Da-Fu Cui ◽  
Hui-Sheng Wang ◽  
Zheng-Hao Chen ◽  
Yue-Liang Zhou ◽  
Hui-Bin Lu ◽  
...  
2008 ◽  
Vol 254 (8) ◽  
pp. 2336-2341 ◽  
Author(s):  
Seiichiro Yaginuma ◽  
Kenji Itaka ◽  
Yuji Matsumoto ◽  
Tsuyoshi Ohnishi ◽  
Mikk Lippmaa ◽  
...  

2000 ◽  
Vol 212 (3-4) ◽  
pp. 451-455 ◽  
Author(s):  
Tong Zhao ◽  
Huibin Lu ◽  
Fan Chen ◽  
Shouyu Dai ◽  
Guozhen Yang ◽  
...  

2017 ◽  
Vol 18 (1) ◽  
pp. 307-315 ◽  
Author(s):  
Kazuhiro Kawashima ◽  
Yuji Okamoto ◽  
Orazmuhammet Annayev ◽  
Nobuo Toyokura ◽  
Ryota Takahashi ◽  
...  

2011 ◽  
Vol 295-297 ◽  
pp. 1958-1963
Author(s):  
Jing Zhi Yang ◽  
Li Juan Fu ◽  
Xiao Peng Qi ◽  
Hong Yun Li

Zn1-xCoxO thin films on sapphire (0001) substrates were synthesized by laser molecular beam epitaxy (LMBE) method at various temperatures under a work ambient pressure of 5.0 x 10-5Pa condition. X-ray diffraction (XRD) spectra, UV–visible transmission spectra and X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectra were employed to characterize the properties of samples. All samples were of wurtzite hexagonal structure with the preferential c-axis-orientation. Co2+ions incorporated into ZnO lattice and substituted for Zn2+ions. ZnLMM Auger spectrum implied Zn interstitials existed in sample. The optical transmission of all samples was relatively high in visible region. Two PL emission peaks located at 418 nm and 490 nm were assigned to the electron transition from the Zn interstitials to the top of the valence band and from the Zn interstitials to the Zn vacancies, respectively.


2008 ◽  
Vol 51 (7) ◽  
pp. 745-749 ◽  
Author(s):  
GuoZhen Liu ◽  
Meng He ◽  
KuiJuan Jin ◽  
GuoZhen Yang ◽  
HuiBin Lü ◽  
...  

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