Comparison of the submicron particle analysis capabilities of Auger electron spectroscopy, time-of-flight secondary ion mass spectrometry, and scanning electron microscopy with energy dispersive x-ray spectroscopy for particles deposited on silicon wafers with 1 μm thick oxide layers

1998 ◽  
Vol 16 (3) ◽  
pp. 1825-1831 ◽  
Author(s):  
Alain C. Diebold ◽  
Patricia Lindley ◽  
Jim Viteralli ◽  
Jeff Kingsley ◽  
Benjamin Y. H. Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectrometry ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Particle Analysis ◽  
Submicron Particle ◽  
X Ray ◽  
Secondary Ion ◽  
Scanning Electron

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

scholarly journals Формирование преципитатов в Si, имплантированном ионами -=SUP=-64-=/SUP=-Zn-=SUP=-+-=/SUP=- и -=SUP=-16-=/SUP=-O-=SUP=-+-=/SUP=-

2018 ◽  
Vol 52 (8) ◽  
pp. 827
Author(s):  
В.В. Привезенцев ◽  
Е.П. Kириленко ◽  
А.В. Горячев ◽  
А.В. Лютцау
Keyword(s):  
Mass Spectrometry ◽  
Surface Layer ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Near Surface ◽  
Secondary Ion ◽  
Post Implantation ◽  
Scanning Electron

AbstractThe results of studying the surface Si layer and precipitate formation in CZ n -Si(100) samples sequentially implanted with ^64Zn^+ ions with a dose of 5 × 10^16 cm^2 and energy of 100 keV and ^16O^+ ions with the same dose but an energy of 33 keV at room temperature so that their projection paths R _ p = 70 nm would coincide are presented. The post-implantation samples are annealed for 1 h in an inert Ar medium in the temperature range of 400–900°C with a step of 100°C. The profiles of the implanted impurities are studied by time-of-flight secondary ion mass spectrometry. The Si surface is visualized using a scanning electron microscope, while the near-surface layer is visualized with the help of maps of elements formed by Auger electron spectroscopy with profiling over depth. The ZnO(002) texture is formed in an amorphized Si layer after the implantation of Zn and O ions. ZnO(102) crystallites of 5 nm in size are found in a recrystallized single-crystalline Si layer after annealing in Ar at 700°C.

scholarly journals The Effect of Al in Plasma-assisted MBE-grown GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 209-215
Author(s):  
Otto Zsebök ◽  
Jan V. Thordson ◽  
Qingxiang Zhao ◽  
Ulf Södervall ◽  
Lars Ilver ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Roughness ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Plasma ◽  
Neutral Donor ◽  
Al Content ◽  
Secondary Ion ◽  
Scanning Electron

We have grown GaN, with addition of a 0.10 to 0.33 % Al, on sapphire(0001) substrates by solid-source RF-plasma assisted MBE. The Al-concentration was determined by secondary ion-mass spectrometry and Auger-electron spectroscopy, while the layer quality was assessed by photoluminescence and high-resolution scanning electron microscopy. Microscopy revealed a meandering pattern and a surface roughness varying with Al-content. The smallest surface roughness was obtained at 0.10 % Al. Photoluminescence revealed two main peaks attributed to the neutral donor-bound exciton. Its energy increased slightly with Al-concentration, which established a correlation between the Al-concentration and the band gap.

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