The Effect of Al in Plasma-assisted MBE-grown GaN
2000 ◽
Vol 5
(S1)
◽
pp. 209-215
Keyword(s):
We have grown GaN, with addition of a 0.10 to 0.33 % Al, on sapphire(0001) substrates by solid-source RF-plasma assisted MBE. The Al-concentration was determined by secondary ion-mass spectrometry and Auger-electron spectroscopy, while the layer quality was assessed by photoluminescence and high-resolution scanning electron microscopy. Microscopy revealed a meandering pattern and a surface roughness varying with Al-content. The smallest surface roughness was obtained at 0.10 % Al. Photoluminescence revealed two main peaks attributed to the neutral donor-bound exciton. Its energy increased slightly with Al-concentration, which established a correlation between the Al-concentration and the band gap.
1998 ◽
Vol 16
(3)
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pp. 1825-1831
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1998 ◽
Vol 16
(5)
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pp. 3148-3148
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2000 ◽
Vol 18
(1)
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pp. 440
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1996 ◽
Vol 14
(4)
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pp. 2392-2404
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1996 ◽
Vol 11
(1)
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pp. 229-235
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1990 ◽
Vol 5
(6)
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pp. 1169-1175
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1975 ◽
Vol 12
(1)
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pp. 352-353
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