Nanotribology of single crystal ZnO surfaces: Restructuring at high temperature annealing

1999 ◽  
Vol 17 (4) ◽  
pp. 1787-1792 ◽  
Author(s):  
J. J. Nainaparampil ◽  
J. S. Zabinski ◽  
S. V. Prasad
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
High Temperature Annealing

Influence of high-temperature annealing on morphological and compositional changes of phases in Ni-base single crystal superalloy

2017 ◽  
Vol 131 ◽  
pp. 266-276 ◽  
Author(s):  
Beata Dubiel ◽  
Izabela Kalemba-Rec ◽  
Adam Kruk ◽  
Tomasz Moskalewicz ◽  
Paulina Indyka ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Single Crystal Superalloy ◽  
High Temperature Annealing ◽  
Compositional Changes

scholarly journals Effects of high temperature annealing on single crystal ZnO and ZnO devices

2012 ◽  
Vol 111 (8) ◽  
pp. 084503 ◽  
Author(s):  
W. Mtangi ◽  
F. D. Auret ◽  
M. Diale ◽  
W. E. Meyer ◽  
A. Chawanda ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
High Temperature Annealing

Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

2014 ◽  
Vol 1591 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Annealing Time ◽  
Silicon Crystal ◽  
Nitrogen Atmosphere ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Floating Zone ◽  
Cross Sectional ◽  
X Ray

ABSTRACTThe precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

2013 ◽  
Vol 16 (3) ◽  
pp. 923-927 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Silicon Wafer ◽  
High Temperature Annealing ◽  
Floating Zone

Formation of stacking fault and dislocation behavior during the high-temperature annealing of single-crystal HPHT diamond

2017 ◽  
Vol 75 ◽  
pp. 155-160 ◽  
Author(s):  
Satoshi Masuya ◽  
Kenji Hanada ◽  
Takayoshi Oshima ◽  
Hitoshi Sumiya ◽  
Makoto Kasu
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Stacking Fault ◽  
High Temperature Annealing ◽  
Dislocation Behavior

Mesotaxy: Formation of Buried Single-Crystal CoSi2 Layers by Implantation

1986 ◽  
Vol 74 ◽  
Author(s):  
Alice E. White ◽  
K. T. Short ◽  
R. C. Dynes ◽  
J. P. Garno ◽  
J. M. Gibson
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Electrical Characterization ◽  
Rutherford Backscattering ◽  
High Dose ◽  
High Temperature Annealing ◽  
Buried Layers ◽  
High Dose Implantation ◽  
Better Than

AbstractUsing high dose implantation of 200 keV Co ions followed by high temperature annealing, we have created buried layers of CoSi2 in crystalline Si of both (100) and (111) orientations. For a dose of 3 × 1017 Co/cm2, the layer that forms is ∼1100Å thick and the overlying Si is ∼600Å thick. A lower dose of 2 × 1017 Co/cm2 yields a thinner layer, 700Å thick, under 1200Å of crystalline Si. Rutherford Backscattering and channeling analysis of the layers shows that they are aligned with the substrate (χmin of the Co as low as 6.4%.) and TEM inspection of the (100) CoSi2/Si interfaces shows that they are abrupt and epitaxial (with occasional small facets). Moreover, electrical characterization of these layers yields resistance ratios that are better than epitaxial CoSi2 films grown by more conventional UHV methods.

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