Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

2013 ◽  
Vol 16 (3) ◽  
pp. 923-927 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
2014 ◽  
Vol 1591 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka

ABSTRACTThe precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.


2017 ◽  
Vol 131 ◽  
pp. 266-276 ◽  
Author(s):  
Beata Dubiel ◽  
Izabela Kalemba-Rec ◽  
Adam Kruk ◽  
Tomasz Moskalewicz ◽  
Paulina Indyka ◽  
...  

2012 ◽  
Vol 111 (8) ◽  
pp. 084503 ◽  
Author(s):  
W. Mtangi ◽  
F. D. Auret ◽  
M. Diale ◽  
W. E. Meyer ◽  
A. Chawanda ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document