Precipitates Caused in Silicon Wafers by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

2014 ◽  
Vol 1591 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Annealing Time ◽  
Silicon Crystal ◽  
Nitrogen Atmosphere ◽  
Silicon Wafers ◽  
High Temperature Annealing ◽  
Floating Zone ◽  
Cross Sectional ◽  
X Ray

ABSTRACTThe precipitate behavior in a floating zone silicon crystal produced from a Czochralski single-crystal ingot has been studied. Large precipitates of α-Si3N4 crystal, having a dimension of about 2 μm, were formed at the mid-depth in the wafer by means of annealing at a high temperature in an ambient N2 (70%) + O2 (30%) atmosphere. The precipitate number detected by cross-sectional X-ray topography increased with the increasing annealing time. Interstitial silicon is expected to eliminate the precipitate origins.

The Study of High Temperature Annealing of a-SiC:H Films

2006 ◽  
Vol 514-516 ◽  
pp. 18-22
Author(s):  
Shibin Zhang ◽  
Z. Hu ◽  
Leandro Raniero ◽  
X. Liao ◽  
Isabel Ferreira ◽  
...  
Keyword(s):  
High Temperature ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Induced Crystallization ◽  
Vapor Deposition Technique ◽  
Crystallization Effect ◽  
Induced Crystallization

A series of amorphous silicon carbide films were prepared by plasma enhanced chemical vapor deposition technique on (100) silicon wafers by using methane, silane, and hydrogen as reactive resources. A very thin (around 15 Å) gold film was evaporated on the half area of the a- SiC:H films to investigate the metal induced crystallization effect. Then the a-SiC:H films were annealed at 1100 0C for 1 hour in the nitrogen atmosphere. Fourier transform infrared spectroscopy (FTIR), X-Ray diffraction (XRD), and scanning electron microscopy (SEM) were employed to analyze the microstructure, composition and surface morphology of the films. The influences of the high temperature annealing on the microstructure of a-SiC:H film and the metal induced metallization were investigated.

Crystalline Defects in Silicon Wafer Caused by Prolonged High-Temperature Annealing in Nitrogen Atmosphere

2013 ◽  
Vol 699 ◽  
pp. 445-449
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Silicon Wafer ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Atmosphere ◽  
Ambient Atmosphere ◽  
High Concentration ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Elemental Analyses

A floating zone (FZ) silicon wafer produced from a Czochralski (CZ) single-crystal ingot was subjected to prolonged annealing at a high temperature. Precipitates were formed in a N2(70%)+O2(30%) ambient atmosphere. The precipitate regions manifested themselves as dark concentric rings in the X-ray topographs. According to the results of cross-sectional transmission electron microscopy observations and energy-dispersive X-ray spectroscopy elemental analyses, nitrogen was distributed throughout the precipitate regions, while oxygen was rich in the periphery of the regions. A high concentration of nitrogen was also directly detected by secondary ion mass spectrometry in the mid-depth of the wafer in the precipitate regions. Electron diffraction analysis of the precipitates showed that their phase was α-Si3N4.

Precipitates caused by prolonged high-temperature annealing in floating zone silicon wafer grown from Czochralski single-crystal rod

2013 ◽  
Vol 16 (3) ◽  
pp. 923-927 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Silicon Wafer ◽  
High Temperature Annealing ◽  
Floating Zone

Precipitates formed in silicon wafers by prolonged high-temperature annealing in nitrogen atmosphere

2014 ◽  
Vol 53 (5S1) ◽  
pp. 05FJ05 ◽  
Author(s):  
Haruo Nakazawa ◽  
Masaaki Ogino ◽  
Hideaki Teranishi ◽  
Yoshikazu Takahashi ◽  
Hitoshi Habuka
Keyword(s):  
High Temperature ◽  
Nitrogen Atmosphere ◽  
Silicon Wafers ◽  
High Temperature Annealing

Influence of High Temperature Annealing on Microstructure Evolution of Ni-24Fe-14Cr-8Mo Superalloy

2021 ◽  
Vol 904 ◽  
pp. 117-123
Author(s):  
Yi Cui ◽  
Yun Fei Zhang ◽  
Yan Guang Han ◽  
Da Lv
Keyword(s):  
High Temperature ◽  
Microstructure Evolution ◽  
Testing Machine ◽  
Aging Treatment ◽  
Growth Patterns ◽  
High Temperature Annealing ◽  
Rockwell Hardness ◽  
Hardness Testing ◽  
X Ray Diffraction ◽  
X Ray

The effect of high temperature annealing on microstructure evolution of Ni-24Fe-14Cr-8Mo alloy was investigated through Optical Microscopy (OM), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD) and Rockwell Hardness Testing Machine. Three kinds of grain growth patterns were found at different annealing temperatures due to carbides precipitation and dissolution. After a combination of high temperature annealing and aging treatment, the hardness versus time curves performed a parabolic pattern. The highest hardness was achieved under 1070°C/60 minutes treatment, and the desirable annealing time should be 60 minutes to 90 minutes.

Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD

2021 ◽  
Vol 42 (12) ◽  
pp. 122804
Author(s):  
Shangfeng Liu ◽  
Ye Yuan ◽  
Shanshan Sheng ◽  
Tao Wang ◽  
Jin Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Flat Surface ◽  
Epitaxial Lateral Overgrowth ◽  
High Temperature Annealing ◽  
High Quality ◽  
High Crystalline Quality ◽  
X Ray ◽  
Lateral Overgrowth

Abstract In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal recrystallization during the HTA process, the FWHMs of X-ray rocking curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec, respectively. On such an AlN template, an ultra-thin AlN with a thickness of ~700 nm grown by MOCVD shows good quality, thus avoiding the epitaxial lateral overgrowth (ELOG) process in which 3–4 μm AlN is essential to obtain the flat surface and high crystalline quality. The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED, therefore significantly improving yields and decreasing cost.

Investigations of Crystalline Phases in Glasses under Various Annealing Conditions

2020 ◽  
Vol 28 ◽  
pp. 14-19
Author(s):  
Zamir V. Shomakhov ◽  
Akhmed M. Karmokov ◽  
Oleg A. Molokanov ◽  
Olga O. Molokanova ◽  
Rita Y. Karmokova ◽  
...  
Keyword(s):  
High Temperature ◽  
Structural Changes ◽  
Irreversible Processes ◽  
High Temperature Annealing ◽  
X Ray Diffraction ◽  
Structural And Phase Transformations ◽  
X Ray ◽  
Air Atmosphere ◽  
Annealing Conditions ◽  
Microchannel Plates

Studies of the temperature dependence of the electrical properties of glasses show that the high-temperature annealing in glasses observed irreversible processes. These processes lead to changes in electrical conductivity, dielectric permittivity, and hence the electrical capacitance, dielectric loss tangent, and other parameters. Obviously, this is due to structural changes in the glass as a result of high-temperature annealing. In this regard, this paper presents studies of structural and phase transformations in glasses used for the production of microchannel plates in the process of high-temperature annealing in vacuum and in the air atmosphere at different times. The studies were conducted by x-ray phase and X-ray diffraction analysis, as well as X-ray fluorescence elemental analysis.

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