Advanced direct write electron beam lithography for GaAs monolithic microwave integrated circuit production

1989 ◽  
Vol 7 (6) ◽  
pp. 1426
Author(s):  
L. K. Hanes
Keyword(s):  
Electron Beam ◽  
Integrated Circuit ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Microwave Integrated Circuit ◽  
Monolithic Microwave Integrated Circuit

РАЗРАБОТКА СВЧ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ МИЛЛИМЕТРОВОГО ДИАПАЗОНА НА ОСНОВЕ GAAS ДЛЯ ПРИМЕНЕНИЯ В СОВРЕМЕННЫХ ИНФОРМАЦИОННОКОММУНИКАЦИОННЫХ СИСТЕМАХ НОВОГО ПОКОЛЕНИЯ (5G)

2020 ◽  
Vol 96 (3s) ◽  
pp. 321-324
Author(s):  
Е.В. Ерофеев ◽  
Д.А. Шишкин ◽  
В.В. Курикалов ◽  
А.В. Когай ◽  
И.В. Федин
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Integrated Circuit ◽  
Phase Shifter ◽  
Phase Error ◽  
Microwave Integrated Circuit ◽  
Gain Compression ◽  
Monolithic Microwave Integrated Circuit ◽  
And Performance ◽  
Power Capability

В данной работе представлены результаты разработки СВЧ монолитной интегральной схемы шестиразрядного фазовращателя и усилителя мощности диапазона частот 26-30 ГГц. СКО ошибки по фазе и амплитуде фазовращателя составили 1,2 град. и 0,13 дБ соответственно. Максимальная выходная мощность и КПД по добавленной мощности усилителя в точке сжатия Ку на 1 дБ составили 30 дБм и 20 % соответственно. This paper describes the design, layout, and performance of 6-bit phase shifter and power amplifier monolithic microwave integrated circuit (MMIC), 26-30 GHz band. Phase shifter MMIC has RMS phase error of 1.2 deg. And RMD amplitude error is 0.13 dB. MMIC power amplifier has output power capability of 30 dBm at 1 dB gain compression (P-1dB) and PAE of 20 %.

Fabrication of submicron microwave bipolar transistors by direct write electron beam lithography

1992 ◽  
Vol 19 (1-4) ◽  
pp. 737-740
Author(s):  
M.N. Webster ◽  
A.H. Verbruggen ◽  
J. Romijn ◽  
H.F.F. Jos ◽  
P.M.A. Moors ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Bipolar Transistors ◽  
Direct Write

scholarly journals Resist Design Considerations for Direct Write and Projection Electron-Beam Lithography Technologies.

1996 ◽  
Vol 9 (4) ◽  
pp. 663-675 ◽  
Author(s):  
Anthony E. Novembre ◽  
Regine G. Tarascon ◽  
Steven D. Berger ◽  
Chris J. Biddick ◽  
Myrtle I. Blakey ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Direct Write ◽  
Design Considerations

Application of direct-write electron-beam lithography for deep-submicron fabrication

1996 ◽  
Author(s):  
Shyi-Long Shy ◽  
Jen Y. Yew ◽  
Kazumitsu Nakamura ◽  
Chun-Yen Chang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Deep Submicron ◽  
Direct Write

A Large Range Compliant Nano-Manipulator Supporting Electron Beam Lithography

2022 ◽  
pp. 1-48
Author(s):  
Yijie Liu ◽  
Zhen Zhang
Keyword(s):  
Electron Beam ◽  
Natural Frequency ◽  
High Precision ◽  
Electron Beam Lithography ◽  
Optimization Design ◽  
Large Range ◽  
Direct Write ◽  
Motion Stage ◽  
Cross Axis ◽  
Precision Motion

Abstract Electron beam lithography (EBL) is an important lithographic process of scanning a focused electron beam (e-beam) to direct write a custom pattern with nanometric accuracy. Due to the very limited field of the focused election beam, a motion stage is needed to move the sample to the e-beam field for processing large patterns. In order to eliminate the stitching error induced by the existing “step and scan” process, we in this paper propose a large range compliant nano-manipulator so that the manipulator and the election beam can be moved in a simultaneous manner. We also present an optimization design for the geometric parameters of the compliant manipulator under the vacuum environment. Experimental results demonstrate 1 mm × 1 mm travel range with high linearity, ~ 0.5% cross-axis error and 5 nm resolution. Moreover, the high natural frequency (~ 56 Hz) of the manipulator facilitates it to achieve high-precision motion of EBL.

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