Fabrication of 150-nm gate-length high electron mobility transistors using x-ray lithography

1994 ◽  
Vol 12 (6) ◽  
pp. 3970 ◽  
Author(s):  
A. M. Haghiri-Gosnet
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
X Ray ◽  
Electron Mobility Transistors

Donor passivation in pseudomorphic-high electron mobility transistors due to plasma-incorporated fluorine impurities observed using x-ray photoemission spectroscopy

2006 ◽  
Vol 21 (5) ◽  
pp. 1331-1335 ◽  
Author(s):  
Hiroyuki Uchiyama ◽  
Takeshi Kikawa ◽  
Takafumi Taniguchi ◽  
Takashi Shiota
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Photoemission Spectroscopy ◽  
High Electron ◽  
Plasma Exposure ◽  
High Electron Mobility ◽  
X Ray ◽  
Electron Mobility Transistors ◽  
Wet Chemical ◽  
Wet Chemical Etching

To investigate the effect of plasma-incorporated fluorine on Si donors in pseudomorphic-high electron mobility transistors (P-HEMTs), we used x-ray photoemission spectroscopy to analyze three layers near the Si δ-doped layer and the Si δ-doped layer itself, in which we previously found fluorine accumulation after post-thermal annealing following fluorocarbon-based plasma exposure. For this evaluation, we developed controllable and low-speed AlGaAs wet-chemical etching using citric-acid-based wet etchant. We used it to expose one of the layers to be analyzed: one 7.5 nm above the Si δ-doped layer, one 1.5 nm above it, the δ-doped layer itself, and one 1.5 nm below it. We found that the accumulated fluorine localized in the δ-doped layer and reacted with Si donors. This is apparently the main reason for the carrier passivation in the fluorocarbon-based plasma-exposed P-HEMTs.

Microwave performance of 0.25-µm gate length high electron mobility transistors

1985 ◽  
Vol 6 (3) ◽  
pp. 142-145 ◽  
Author(s):  
U.K. Mishra ◽  
S.C. Palmateer ◽  
P.C. Chao ◽  
P.M. Smith ◽  
J.C.M. Hwang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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