Optical characterization of low temperature grown GaAs by transmission measurements above the band gap

1996 ◽  
Vol 14 (3) ◽  
pp. 2275 ◽  
Author(s):  
D. Streb
Keyword(s):  
Low Temperature ◽  
Band Gap ◽  
Optical Characterization ◽  
Transmission Measurements ◽  
Low Temperature Grown Gaas

Optical and Electrical Characterizations of Nanoscale Robust 3C-SiC Membrane for UV Sensing Applications

2018 ◽  
Vol 775 ◽  
pp. 278-282
Author(s):  
A.R.M. Foisal ◽  
T. Dinh ◽  
A. Iacopi ◽  
L. Hold ◽  
E.W. Streed ◽  
...  
Keyword(s):  
Uv Light ◽  
Optical Characterization ◽  
Considerable Change ◽  
Electrical Contacts ◽  
Si Substrate ◽  
Uv Illumination ◽  
Sensing Applications ◽  
Transmission Measurements ◽  
Electrical Characterizations

This paper presents the fabrication and optical characterization of an ultrathin 3C-SiC membrane for UV light detection. SiC nanoscale film was grown on Si substrate and subsequently released to form a robust membrane with a high aspect ratio of about 5000. Transmission measurements were performed to determine the thickness of the film with a high accuracy of 98%. We also employed a simple and highly effective direct wirebonding technique to form electrical contacts to the SiC membrane. The considerable change in the photocurrent of the SiC membrane was observed under UV illumination, indicating the potential of using 3C-SiC membranes for UV detection.

Structural and optical characterization of hemimorphite with flower-like morphology synthesized by a novel low-temperature method

2012 ◽  
Vol 85 ◽  
pp. 138-141 ◽  
Author(s):  
Ivana Lj. Validžić ◽  
Miodrag Mitrić ◽  
Bojan M. Jokić ◽  
Mirjana I. Čomor
Keyword(s):  
Low Temperature ◽  
Optical Characterization ◽  
Temperature Method

Structural and Optical Characterization of InGaN Layers Grown by MOMBE

2003 ◽  
Vol 798 ◽  
Author(s):  
P. Singh ◽  
J. Aderhold ◽  
J. Graul ◽  
V. Yu. Davydov ◽  
F. Gourbilleau ◽  
...  
Keyword(s):  
Band Gap ◽  
Crystalline State ◽  
Optical Characterization ◽  
Xrd And Tem

ABSTRACTThe investigated InGaN ternary films were grown by MOMBE, with the In fraction varying from 6% to 100%. Using XRD and TEM, we determine the crystalline state, the nature of defects inside the layers and their distribution as related to the In concentration. The band gap of the alloys was studied through PL measurements, it is below 1 eV for InN.

Characterization of Femtosecond Low-Temperature-Grown GaAs Photoconductive Switch

2002 ◽  
Vol 19 (4) ◽  
pp. 557-559 ◽  
Author(s):  
Lin Wei-Zhu ◽  
Liu Zhi-Gang ◽  
Liao Rui ◽  
Zhang Hai-Chao ◽  
Guo Bing ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoconductive Switch ◽  
Low Temperature Grown Gaas

scholarly journals Low-Temperature Optical Characterization of Single CdS Nanowires

2006 ◽  
Author(s):  
L.V. Titova ◽  
T.B. Hoang ◽  
H.E. Jackson ◽  
L.M. Smith ◽  
J.M. Yarrison-Rice ◽  
...  
Keyword(s):  
Low Temperature ◽  
Optical Characterization ◽  
Cds Nanowires

Variable energy positron beam characterization of defects in as-grown and annealed low temperature grown GaAs

1993 ◽  
Vol 22 (12) ◽  
pp. 1405-1408 ◽  
Author(s):  
M. T. Umlor ◽  
D. J. Keeble ◽  
P. W. Cooke ◽  
P. Asoka-Kumar ◽  
K. G. Lynn
Keyword(s):  
Low Temperature ◽  
Positron Beam ◽  
Beam Characterization ◽  
Low Temperature Grown Gaas ◽  
Variable Energy
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