Optical and Electrical Characterizations of Nanoscale Robust 3C-SiC Membrane for UV Sensing Applications

2018 ◽  
Vol 775 ◽  
pp. 278-282
Author(s):  
A.R.M. Foisal ◽  
T. Dinh ◽  
A. Iacopi ◽  
L. Hold ◽  
E.W. Streed ◽  
...  
Keyword(s):  
Uv Light ◽  
Optical Characterization ◽  
Considerable Change ◽  
Electrical Contacts ◽  
Si Substrate ◽  
Uv Illumination ◽  
Sensing Applications ◽  
Transmission Measurements ◽  
Electrical Characterizations

This paper presents the fabrication and optical characterization of an ultrathin 3C-SiC membrane for UV light detection. SiC nanoscale film was grown on Si substrate and subsequently released to form a robust membrane with a high aspect ratio of about 5000. Transmission measurements were performed to determine the thickness of the film with a high accuracy of 98%. We also employed a simple and highly effective direct wirebonding technique to form electrical contacts to the SiC membrane. The considerable change in the photocurrent of the SiC membrane was observed under UV illumination, indicating the potential of using 3C-SiC membranes for UV detection.

Surface Characterization of Silicon Carbide Following Shallow Implantation of Palladium Ions

2005 ◽  
Vol 900 ◽  
Author(s):  
Claudiu I. Muntele ◽  
Sergey Sarkisov ◽  
Iulia Muntele ◽  
Daryush Ila
Keyword(s):  
Silicon Carbide ◽  
Surface Characterization ◽  
Wide Bandgap ◽  
Electrical Contacts ◽  
Temperature Dependent ◽  
Wide Bandgap Semiconductor ◽  
Hydrogen Sensing ◽  
Fast Switching ◽  
Sensing Applications

ABSTRACTSilicon carbide is a promising wide-bandgap semiconductor intended for use in fabrication of high temperature, high power, and fast switching microelectronics components running without cooling. For hydrogen sensing applications, silicon carbide is generally used in conjunction with either palladium or platinum, both of them being good catalysts for hydrogen. Here we are reporting on the temperature-dependent surface morphology and depth profile modifications of Au, Ti, and W electrical contacts deposited on silicon carbide substrates implanted with 20 keV Pd ions.

Synthesis, Structural and Sensor Characterization of Ga-ZnO Nanodisk/Nanorods Prepared by One Step Polymer Assisted Hydrothermal Process on AlN/Si Substrate

2013 ◽  
Vol 756 ◽  
pp. 251-258
Author(s):  
R. Jothi Ramalingam ◽  
G. Dinesh
Keyword(s):  
Uv Light ◽  
Hydrothermal Process ◽  
X Ray Diffraction ◽  
Fast Recovery ◽  
Si Substrate ◽  
Effective Response ◽  
Light Sensing ◽  
One Step ◽  
Film Substrate

Synthesis and characterization of Ga-doped ZnO nanodisk and the formation of nanodisk/nanorod hybrid morphologies on AlN/Si substrate by polymer assisted one-pothydrothermal process have been studied. The morphology and structural properties were determined by field emission scanning electron microscopy (FESEM) and X-ray diffraction techniques. FESEM images clearly confirm the pure nanodisk formation for Ga-ZnO(0.5) at optimized ZnO concentration and hybrid nanodisk/nanorod formation obtained for Ga-ZnO (0.2) at lower ZnO concentration. The pure Ga-ZnO (0.5) nanodisk on AlN/Si thin film substrate showed effective response and fast recovery time towards UV light sensing in dark condition compared to low concentration route preparedGa-ZnO (0.2)/AlN/Si sample.

Transmission measurements for the optical characterization of 2D-photonic crystals

2005 ◽  
Author(s):  
Martina Gerken ◽  
René Boschert ◽  
Rainer Bornemann ◽  
Uli Lemmer ◽  
Detlef Schelle ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Optical Characterization ◽  
Transmission Measurements

Structural and optical characterization of undoped, doped, and clustered ZnO thin films obtained by PLD for gas sensing applications

2007 ◽  
Vol 253 (15) ◽  
pp. 6499-6503 ◽  
Author(s):  
C. Ristoscu ◽  
D. Caiteanu ◽  
G. Prodan ◽  
G. Socol ◽  
S. Grigorescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Optical Characterization ◽  
Zno Thin Films ◽  
Sensing Applications

Optical Characterization of Self-Assembled Ge Dots on Silicon

2001 ◽  
Vol 707 ◽  
Author(s):  
F. Marabelli ◽  
A. Rastelli ◽  
A. Valsesia ◽  
H.von Känel
Keyword(s):  
Vibrational Mode ◽  
Optical Characterization ◽  
Optical Measurements ◽  
Ex Situ ◽  
Optical Transitions ◽  
Si Substrate ◽  
Magnetron Sputter ◽  
Self Assembled

ABSTRACTSelf assembled quantum dots of Ge were obtained by magnetron sputter epitaxy of seven monolayers of Ge on a 33nm thick undoped Si buffer grown on top of a p-doped (100) Si substrate. The samples obtained in this manner were then capped with an increasing number of silicon layers in order to study the effect of Si deposition on the strain and the morphology of the dots. They were characterized “ex situ” by spectroscopic ellipsometry and Raman spectroscopy. The optical experiments revealed well defined differences between the capped and uncapped samples and among samples with different cap thicknesses.By monitoring the energy and the splitting of the E0', E1 and E2 interband optical transitions of Ge and the Ge-Si vibrational mode, the optical measurements evidence strain effects as well as the formation of SiGe alloy, in agreement with the “in situ” STM measurements.

SYNTHESIS AND CHARACTERIZATION OF PURE AND Zn-DOPED SnO2 NANOPOWDERS

2013 ◽  
Vol 22 ◽  
pp. 452-457 ◽  
Author(s):  
PARUL GUPTA ◽  
RISHI VYAS ◽  
B. L. CHOUDHARY ◽  
K. SACHDEV ◽  
D. S. PATIL ◽  
...  
Keyword(s):  
Gas Sensing ◽  
Sol Gel ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Sensing Applications ◽  
Zn Addition ◽  
Vis Spectroscopy ◽  
Electrical Characterizations

Pure and 4.5 wt% Zn- doped SnO2 nanopowders were synthesized by sol-gel method. These nanopowders were characterized by X- ray diffraction, Scanning electron microscopy, UV-Vis spectroscopy, I-V measurements and R-T measurements. XRD results confirmed the formation of tetragonal rutile type SnO2 with the average crystallite size of 14 ± 1 nm which decreased to 9 ± 1 nm with 4.5 wt% Zn addition. Increase in band gap is observed from UV-Vis spectroscopy. Electrical characterizations revealed increase in resistivity with Zn addition. Temperature dependent resistance measurement showed that both the pure and the Zn- doped samples are suitable for gas sensing applications. A detailed study of these synthesized nanostructured samples is presented and discussed in the paper.

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