Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition

2021 ◽  
Vol 39 (3) ◽  
pp. 032401
Author(s):  
Maximilian Kolhep ◽  
Cheng Sun ◽  
Jürgen Bläsing ◽  
Björn Christian ◽  
Margit Zacharias
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition ◽  
Aln Buffer

Effects of annealing temperature and Al2O3 buffer layer on ZnO thin films grown by atomic layer deposition

2010 ◽  
Vol 10 (2) ◽  
pp. S298-S301 ◽  
Author(s):  
C.R. Kim ◽  
J.Y. Lee ◽  
J.H. Heo ◽  
C.M. Shin ◽  
T.M. Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

Pulsed heating atomic layer deposition (PH-ALD) for epitaxial growth of zinc oxide thin films on c-plane sapphire

2021 ◽  
Author(s):  
Brandon Deane Piercy ◽  
Jamie Pearce Wooding ◽  
Shawn Gregory ◽  
Mark D. Losego
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Epitaxial Growth ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Temperature Sensitive ◽  
Pulsed Heating ◽  
Layer Deposition

An in situ pulsed heating atomic layer deposition (PH-ALD) technique is used to grow heteroepitaxial ZnO thin films on c-plane sapphire from temperature-sensitive metalorganic precursors. During metalorganic precursor delivery, the...

Effect of Buffer Layer Annealing on ZnO Thin Films Grown by using Atomic Layer Deposition

2009 ◽  
Vol 55 (6) ◽  
pp. 2556-2559 ◽  
Author(s):  
J. Y. Lee ◽  
C. R. Kim ◽  
J. H. Heo ◽  
C. M. Shin ◽  
J. H. Park ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Layer Deposition

scholarly journals Structural defects in ZnO thin films grown by atomic layer deposition at low temperatures

2021 ◽  
Vol 27 (S1) ◽  
pp. 2660-2662
Author(s):  
David Elam ◽  
Eduardo Ortega ◽  
Andrey Chabanov ◽  
Arturo Ponce
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Low Temperatures ◽  
Atomic Layer ◽  
Structural Defects ◽  
Zno Thin Films ◽  
Layer Deposition

Preparation of boron-doped ZnO thin films by photo-atomic layer deposition

2001 ◽  
Vol 65 (1-4) ◽  
pp. 125-132 ◽  
Author(s):  
Y. Yamamoto ◽  
K. Saito ◽  
K. Takahashi ◽  
M. Konagai
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Boron Doped ◽  
Layer Deposition ◽  
Doped Zno

Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Nitrogen Atmosphere ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Zno Film ◽  
Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

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