Influence of substrate temperature on graphene oxide thin films synthesis by laser ablation technique

2022 ◽  
Vol 40 (1) ◽  
pp. 013402
Author(s):  
Juan D. Lopez ◽  
Manuel A. Castellanos ◽  
Henry Riascos
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Laser Ablation ◽  
Substrate Temperature ◽  
Oxide Thin Films ◽  
Ablation Technique ◽  
Influence Of Substrate ◽  
Laser Ablation Technique

Deposition of Tungsten Films by Pulsed Excimer Laser Ablation Technique

1993 ◽  
Vol 334 ◽  
Author(s):  
A.M. Dhote ◽  
S.B. Ogale
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Film Growth ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Temperature Range ◽  
M Phase ◽  
Influence Of Substrate ◽  
Laser Ablation Technique

AbstractLow temperature deposition of W on Semiconductor substrates is vital for microelectronics technology. Laser ablation technique using KrF (248 nm) excimer laser has been employed to deposit W films from W(CO)6. The substrates used are Si(100) and SiO2. The influence of substrate temperature on the film growth rate was investigated in a broad temperature range (20 - 500 °C), keeping the laser fluence fixed at 0.4 Jcm−2. The substrate temperature is found to have a strong influence on the resistivity of the deposited films. Film resistivities within a factor of 3 of the value for pure bulk W have been observed in the substrate temperature range of 300 - 500 °C. X-ray diffraction data were also obtained. These revealed that the crystal structure of the film deposited in this temperature range corresponds specifically to the m-phase. Optical emissions from the plasma generated during the pulsed excimer laser ablation of W(CO)6 are also examined by an optical Multichannel Analyser (OMA).

Studies of aluminum oxide thin films deposited by laser ablation technique

2016 ◽  
Vol 56 ◽  
pp. 49-57 ◽  
Author(s):  
P. Płóciennik ◽  
D. Guichaoua ◽  
A. Korcala ◽  
A. Zawadzka
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Aluminum Oxide ◽  
Oxide Thin Films ◽  
Ablation Technique ◽  
Laser Ablation Technique

Lead Zirconate-Titanate Thin Films Prepared by the Laser Ablation Technique

1990 ◽  
Vol 200 ◽  
Author(s):  
C. K. Chiang ◽  
L. P. Cook ◽  
P. K. Schenck ◽  
P. S. Brody ◽  
J. M. Benedetto
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
X Ray ◽  
Ablation Technique ◽  
Zirconate Titanate ◽  
Deposited Films ◽  
Plate Type ◽  
Laser Ablation Technique

ABSTRACTLead zirconate-titanate (PZT) thin films were prepared by the laser ablation technique. The PZT (Zr/Ti=53/47) target was irradiated using a focused q-switched Nd:YAG laser (15 ns, 100 mJ at 1.064 μ;m). The as-deposited films were amorphous as indicated by X-ray powder patterns, but crystallized readily with brief annealing above 650°C. The dielectric constant and the resistivity of the crystallized films were studied using a parallel-plate type capacitor structure.

Deposition of c-oriented borocarbide thin films by laser ablation technique

1999 ◽  
Vol 9 (2) ◽  
pp. 1727-1730 ◽  
Author(s):  
M.R. Cimberle ◽  
C. Ferdeghini ◽  
G. Grassano ◽  
D. Marre ◽  
I. Pallecchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Ablation Technique ◽  
Laser Ablation Technique
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