Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0001334 ◽

2021 ◽

Vol 39 (6) ◽

pp. 062405

Author(s):

Toshihide Nabatame ◽

Erika Maeda ◽

Mari Inoue ◽

Masafumi Hirose ◽

Yoshihiro Irokawa ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Interfacial Layers ◽

Layer Deposition

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(Invited) Atomic Layer Deposition of HfO2 Using HF Etched Thermal and RTP SiO2 as Interfacial Layers

ECS Meeting Abstracts ◽

10.1149/ma2014-01/36/1364 ◽

2014 ◽

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Interfacial Layers ◽

Layer Deposition

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(Invited) Atomic Layer Deposition of HfO2 Using HF Etched Thermal and RTP SiO2 as Interfacial Layers

ECS Transactions ◽

10.1149/06102.0143ecst ◽

2014 ◽

Vol 61 (2) ◽

pp. 143-149 ◽

Author(s):

L. Han ◽

Z. D. Chen

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Interfacial Layers ◽

Layer Deposition

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Impact of Atomic Layer Deposition High k Films on Slow Trap Density in Ge MOS Interfaces With GeOx Interfacial Layers Formed by Plasma Pre-Oxidation

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2018.2822758 ◽

2018 ◽

Vol 6 ◽

pp. 950-955 ◽

Author(s):

Mengnan Ke ◽

Mitsuru Takenaka ◽

Shinichi Takagi

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Trap Density ◽

Interfacial Layers ◽

Layer Deposition ◽

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Tuning the Absolute Band Gap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers

ECS Transactions ◽

10.1149/1.2779089 ◽

2019 ◽

Vol 11 (7) ◽

pp. 259-267

Author(s):

Makhin Thitsa ◽

Diefeng Gu ◽

Helmut Baumgart ◽

Sacharia Albin

Keyword(s):

Photonic Crystals ◽

Atomic Layer Deposition ◽

Band Gap ◽

Atomic Layer ◽

Interfacial Layers ◽

Layer Deposition ◽

Silicon Photonic ◽

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Tuning the Absolute Band Gap of Silicon Photonic Crystals by Atomic Layer Deposition (ALD) Interfacial Layers

ECS Meeting Abstracts ◽

10.1149/ma2007-02/17/1003 ◽

2007 ◽

Keyword(s):

Photonic Crystals ◽

Atomic Layer Deposition ◽

Band Gap ◽

Atomic Layer ◽

Interfacial Layers ◽

Layer Deposition ◽

Silicon Photonic ◽

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Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

Journal of Applied Physics ◽

10.1063/1.4929650 ◽

2015 ◽

Vol 118 (8) ◽

pp. 085309 ◽

Author(s):

C.-Y. Chang ◽

O. Ichikawa ◽

T. Osada ◽

M. Hata ◽

H. Yamada ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Gate Stacks ◽

Semiconductor Interface ◽

Interfacial Layers ◽

Layer Deposition

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Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2204996 ◽

2012 ◽

Vol 59 (9) ◽

pp. 2350-2356 ◽

Author(s):

Hyung-Suk Jung ◽

Il-Hyuk Yu ◽

Hyo Kyeom Kim ◽

Sang Young Lee ◽

Joohwi Lee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Charge Trapping ◽

Atomic Layer ◽

Interfacial Layers ◽

Layer Deposition

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Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

Applied Physics Letters ◽

10.1063/1.2741609 ◽

2007 ◽

Vol 90 (21) ◽

pp. 212104 ◽

Author(s):

Kyoung H. Kim ◽

Roy G. Gordon ◽

Andrew Ritenour ◽

Dimitri A. Antoniadis

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tungsten Nitride ◽

Gate Stacks ◽

Interfacial Layers ◽

Layer Deposition

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Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

Trends in Chemistry ◽

10.1016/j.trechm.2020.11.002 ◽

2021 ◽

Vol 3 (1) ◽

pp. 59-71

Author(s):

Degao Wang ◽

Qing Huang ◽

Weiqun Shi ◽

Wei You ◽

Thomas J. Meyer

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Dye Sensitized ◽

Layer Deposition

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Growth and Characteristics of ZnO Nanotube Arrays on Si Substrate by Atomic Layer Deposition in Anodic Aluminum Oxide

10.1557/proc-1109-b09-09 ◽

2008 ◽

Author(s):

Soo Jin Chua ◽

Miao Wang ◽

Han Gao ◽

Carl V. Thompson ◽

Lee Kheng Tan

Keyword(s):

Atomic Layer Deposition ◽

Aluminum Oxide ◽

Anodic Aluminum Oxide ◽

Atomic Layer ◽

Nanotube Arrays ◽

Si Substrate ◽

Anodic Aluminum ◽

Zno Nanotube ◽

Layer Deposition

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