Performance improvement of indoor positioning using light-emitting diodes and an image sensor for light-emitting diode communication

2015 ◽  
Vol 54 (3) ◽  
pp. 035108 ◽  
Author(s):  
Md. Sazzad Hossen ◽  
Youngil Park ◽  
Ki-Doo Kim
2016 ◽  
Vol 10 (5) ◽  
pp. 184-192 ◽  
Author(s):  
Jae-Yoon Kim ◽  
Sang-Kook Han ◽  
Se-Hoon Yang ◽  
Yong-Hwan Son

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tsubasa Sasaki ◽  
Munehiro Hasegawa ◽  
Kaito Inagaki ◽  
Hirokazu Ito ◽  
Kazuma Suzuki ◽  
...  

AbstractAlthough significant progress has been made in the development of light-emitting materials for organic light-emitting diodes along with the elucidation of emission mechanisms, the electron injection/transport mechanism remains unclear, and the materials used for electron injection/transport have been basically unchanged for more than 20 years. Here, we unravelled the electron injection/transport mechanism by tuning the work function near the cathode to about 2.0 eV using a superbase. This extremely low-work function cathode allows direct electron injection into various materials, and it was found that organic materials can transport electrons independently of their molecular structure. On the basis of these findings, we have realised a simply structured blue organic light-emitting diode with an operational lifetime of more than 1,000,000 hours. Unravelling the electron injection/transport mechanism, as reported in this paper, not only greatly increases the choice of materials to be used for devices, but also allows simple device structures.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Mingming Jiang ◽  
Fupeng Zhang ◽  
Kai Tang ◽  
Peng Wan ◽  
Caixia Kan

Achieving electrically-driven exciton-polaritons has drawn substantial attention toward developing ultralow-threshold coherent light sources, containing polariton laser devices and high-performance light-emitting diodes (LEDs). In this work, we demonstrate an electrically driven...


Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.


2014 ◽  
Vol 23 (2) ◽  
pp. 028502 ◽  
Author(s):  
Xiao-Peng Yu ◽  
Guang-Han Fan ◽  
Bin-Bin Ding ◽  
Jian-Yong Xiong ◽  
Yao Xiao ◽  
...  

2019 ◽  
Vol 6 (10) ◽  
pp. 2009-2015 ◽  
Author(s):  
Zhiwen Yang ◽  
Qianqian Wu ◽  
Gongli Lin ◽  
Xiaochuan Zhou ◽  
Weijie Wu ◽  
...  

An all-solution processed inverted green quantum dot-based light-emitting diode with concurrent high efficiency and long lifetime is obtained by precisely controlled double shell growth of quantum dots.


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