Copper (Cu) is the main interconnect conductor for integrated circuits (IC), and its processing quality is very important to device performance. Herein, a hybrid process of plasma oxidation and femtosecond laser (fs-laser) ablation was proposed for the nanoscale precision removal of Cu in integrated circuits. In this hybrid process, the surface layer of Cu was oxidized to the copper oxide by plasma oxidation, and then the fs-laser with a laser fluence lower than the Cu ablation threshold was used to remove the copper oxide without damaging the underlying Cu. Theoretically, the surface temperature evolutions of Cu and copper oxide under the femtosecond laser were studied by the two-temperature model, and it was revealed that the ablation threshold of copper oxide is much lower than that of Cu. The experimental results showed that the ablation threshold of copper oxide is lower than that of Cu, which is consistent with the theoretical analysis. Using the hybrid process, a surface roughness of 3 nm and a removal accuracy of 4 nm were obtained in the process of Cu film processing, which were better than those obtained by fs-laser ablation. This demonstrated that the hybrid process has good application potential in the field of copper micromachining.
Nanoscale-Precision Removal of Copper in Integrated Circuits Based on a Hybrid Process of Plasma Oxidation and Femtosecond Laser Ablation
