Effect of feed velocity change on amount of material removal for free abrasive polishing with sub-aperture pad

2016 ◽  
Author(s):  
Songlin Wan ◽  
Xiaoying He ◽  
Xiangchao Zhang ◽  
Min Xu
Keyword(s):  
Material Removal ◽  
Velocity Change ◽  
Feed Velocity ◽  
Free Abrasive

Study on Fixed Abrasive Lapping Technology for Ceramic Balls

2006 ◽  
Vol 532-533 ◽  
pp. 460-463 ◽  
Author(s):  
Bing Hai Lv ◽  
Ju Long Yuan ◽  
Ying Xue Yao ◽  
Zhi Wei Wang
Keyword(s):  
Silicon Nitride ◽  
Material Removal Rate ◽  
Wear Mechanism ◽  
Material Removal ◽  
Removal Rate ◽  
Finishing Process ◽  
Photosensitive Resin ◽  
Ball Surface ◽  
Fixed Abrasive ◽  
Free Abrasive

To improve low lapping efficiency of silicon nitride balls in conventional lapping process, fixed abrasive lapping technology for ceramic balls is investigated in this paper. Diamond abrasives and photosensitive resin are used to fabricate the fixed abrasive plate. The lapped ball surface is observed with microscopy to identify the dominant wear mechanism. The results show that the material removal rate of the fixed abrasive lapping is about 20 times of that of conventional free abrasive lapping process, and the roughness is close to the conventional one. The experimental results indicate that the fixed abrasive lapping technology is a promising process to instead of conventional free abrasive lapping process for ceramic balls in rough and semi-finishing process.

Effect of Free Abrasive Particle in Gasbag Polishing Technique

2009 ◽  
Vol 69-70 ◽  
pp. 83-87
Author(s):  
Ming Sheng Jin ◽  
Shi Ming Ji ◽  
Li Zhang ◽  
Xian Zhang ◽  
Ya Qi Shen
Keyword(s):  
Material Removal ◽  
Abrasive Particle ◽  
General Distribution ◽  
Material Removal Mechanism ◽  
Polishing Process ◽  
Mould Surface ◽  
Movement Characteristic ◽  
Distribution State ◽  
Polishing Efficiency ◽  
Free Abrasive

Free abrasive particle plays a crucial role in material removal and quality improvement of curved surface mould. In order to observe and investigate the general distribution state, fractal dimension and movement characteristic of abrasive particle in gasbag polishing process better, an abrasive particle stroboscopic photography system is established and polishing experiment is carried out. The abrasive particle contacts with not only the rubber gasbag enwrapped by polishing cloth full of mesh-like structures, but also the mould surface. Contact analysis of abrasive particle including the discussions of contact state, material removal mechanism and advantage of precession polishing is helpful to hold the optimal polishing process parameters combination and establish ideal abrasive particle field for higher polishing efficiency and more well-proportioned surface quality.

Theoretical and Experimental Research on the Material Removal Rate in Ultrasonic Aided Lapping of ZTA Ceramic

2009 ◽  
Vol 76-78 ◽  
pp. 240-245
Author(s):  
Feng Jiao ◽  
Bo Zhao
Keyword(s):  
Material Removal ◽  
Production Efficiency ◽  
High Efficiency ◽  
Removal Rate ◽  
Processing Method ◽  
Ultrasonic Machining ◽  
Precision Engineering ◽  
Engineering Ceramic ◽  
Fixed Abrasive ◽  
Free Abrasive

Lower machining efficiency of traditional lapping with free abrasive restricts the enhancement of the precision parts’ production efficiency. It is necessary to improve lapping efficiency on the premise of guarantee of lapping quality. In this paper, a new ultrasonic aided lapping technology was developed by combining lapping technology and ultrasonic machining technology and a series of lapping experiments of ZTA engineering ceramic with and without ultrasonic assistance were carried out. The results of theoretical analysis and experimental study show that it is the ultrasonic assistance of the lapping tool that promotes the enhancement of lapping efficiency and the ultrasonic aided lapping technique with fixed abrasive can be regarded as a high efficiency processing method of the precision engineering ceramic part.

Experimental Study of the Impact of a Vibrating Wire on Free Abrasive Machining as Correlated to the Modeling of Vibration Subject to an Oscillating Boundary Condition

2020 ◽  
Vol 143 (5) ◽  
Author(s):  
Liming Li ◽  
Imin Kao
Keyword(s):  
Boundary Condition ◽  
Material Removal ◽  
Substrate Surface ◽  
Abrasive Machining ◽  
Vibrating Wire ◽  
Fracture Formation ◽  
Oscillating Boundary ◽  
The Impact ◽  
Brittle Material Removal ◽  
Free Abrasive

Abstract In this paper, we study experimentally the impact of a vibrating wire on the free abrasive machining (FAM) process in removing material from the surface of brittle materials, such as silicon. An experimental setup was designed to study the FAM process on silicon substrate surface by using a slurry-fed wire with a periodic excitation. An analytical solution of a wire moving axially, subject to an oscillating boundary condition with damping from abrasive slurry, was derived based on the partial differential equation of motion. Experiments were conducted on the apparatus using a wire with an oscillating boundary. It was found that the amplitudes of vibration were larger at the side of the oscillatory boundary, which caused more FAM interaction near the edge of the oscillatory boundary with larger material removal that was measured and validated. Furthermore, experiments were conducted to elucidate the effectiveness of brittle material removal using FAM with abrasive grits: (i) under dry condition, (ii) with water, and (iii) with abrasive slurry. Experimental results showed that the vibration of wire resulted in plastic deformation on the surface of silicon wafer. The abrasive grits in slurry driven by a vibrating wire generated material removal through observable grooves and fractures on the surface of silicon due to FAM in just a few minutes. The grooves from FAM process is an outcome of brittle machining through fracture formation and concatenation, generated by the indentation of abrasive grits on the silicon surface.

Study on 6H-SiC Crystal Substrate (0001) C Surface in FA-CMP Based on Diamond Particle

2015 ◽  
Vol 727-728 ◽  
pp. 244-247
Author(s):  
Zhu Qing Zhang ◽  
Kang Lin Xing
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Diamond Particle ◽  
Mechanical Polishing ◽  
Crystal Substrate ◽  
Fixed Abrasive ◽  
Free Abrasive

Through experimental study on the role of the free abrasive in chemical mechanical polishing, in this paper, four different types of abrasive which were chosen were used for the research of material removal rate(MRR) and surface quality of SiC single crystal . Finally ,Diamond abrasive which is considered was the most suitable for chemical mechanical polishing(CMP) abrasive of SiC Crystal Substrate. With diamond Particle polish pad polishing, it is draw a comparison result on the influence of the free abrasive and consolidation abrasive for the material removal rate and surface quality of 6H-SiC. The results showed that: the MRR is 140nm / min, the material removal rate if fixed abrasive chemical mechanical polishing(FA-CMP) more than three times that of traditional CMP, fixed abrasive chemical mechanical polishing pad, are involved in a large proportion of micro abrasive cutting, can greatly improve the material removal efficiency. And results from the test procedure, the FA-CMP surface has scratches after more technical problems for the polishing pad, the surface damage is relatively free of abrasive chemical mechanical polishing is more serious.

Surface Texture Analysis of Fixed and Free Abrasive Machining of Silicon Substrates for Solar Cells

2010 ◽  
Vol 126-128 ◽  
pp. 177-180 ◽  
Author(s):  
Chao Chang Arthur Chen ◽  
Pei Hsiun Chao
Keyword(s):  
Solar Cells ◽  
Surface Texture ◽  
Material Removal ◽  
Silicon Substrates ◽  
Wire Saw ◽  
Wafer Slicing ◽  
Sawing Process ◽  
Surface Texture Analysis ◽  
Fixed Abrasive ◽  
Free Abrasive

Multi-wire sawing process has been widely used for wafer slicing of silicon substrates for solar cells. Usually there are two different kinds of wire saw in multi-wire sawing process including free abrasive wire sawing with SiC grits and fixed abrasive wire sawing with diamond wire. For free abrasive wire sawing process, the material removal mechanism can be considered as lapping and the fixed abrasive wire sawing can be considered as grinding. This paper is to investigate the characteristics of the surface texture of silicon substrate fabricated by these two wire sawing process. Experimental results have been observed by white light interferometry and SEM. Some different properties of both processes have compared been with variant characteristics including 2-D and 3-D surface roughness parameters. Results of this paper can be further used to evaluate the feasibility of wire sawing process of silicon substrates for solar cells.

Geschwindigkeitsabhängiger Materialabtrag beim Polieren/Influence of feed velocity on material removal for corrective polishing – Velocity dependent material removal in polishing

2020 ◽  
Vol 110 (11-12) ◽  
pp. 796-799
Author(s):  
Barnabas Adam ◽  
Bernhard Karpuschewski ◽  
Oltmann Riemer
Keyword(s):  
Feed Rate ◽  
Material Removal ◽  
Feed Velocity

Kenntnisse über den Materialabtrag sind für die Steuerung von Korrekturpolierprozessen essenziell. Basierend auf der Preston-Hypothese wird bei Polierprozessen ein linearer Einfluss der Relativgeschwindigkeit auf den Materialabtrag angenommen. Dieser Beitrag untersucht experimentell den Einfluss der Vorschubgeschwindigkeit auf den Materialabtrag beim abrasiven Subapertur-Polieren und gibt einen Ausblick auf eine Gestaltung deterministischer Polierprozesse. Knowledge of material removal is essential for controlling corrective polishing processes. Based on the Preston hypothesis, a linear influence of feed velocity on material removal is assumed for polishing processes. The presented article investigates experimentally the influence of feed rate on material removal for abrasive-subaperture polishing and gives an outlook on a design of deterministic polishing processes.

On the mechanism of material removal by free abrasive grinding of glass and fused silica

Wear ◽  
1977 ◽  
Vol 41 (2) ◽  
pp. 327-350 ◽  
Author(s):  
K. Phillips ◽  
G.M. Crimes ◽  
T.R. Wilshaw
Keyword(s):  
Material Removal ◽  
Fused Silica ◽  
Free Abrasive

Modeling and analysis of the material removal profile for free abrasive polishing with sub-aperture pad

2014 ◽  
Vol 214 (2) ◽  
pp. 285-294 ◽  
Author(s):  
Cheng Fan ◽  
Ji Zhao ◽  
Lei Zhang ◽  
Yoke San Wong ◽  
Geok Soon Hong ◽  
...  
Keyword(s):  
Material Removal ◽  
Modeling And Analysis ◽  
Free Abrasive

Elasto-Hydrodynamic Interaction in the Free Abrasive Wafer Slicing Using a Wiresaw: Modeling and Finite Element Analysis

1999 ◽  
Vol 122 (2) ◽  
pp. 394-404 ◽  
Author(s):  
M. Bhagavat ◽  
V. Prasad ◽  
I. Kao
Keyword(s):  
Finite Element ◽  
Film Thickness ◽  
Material Removal ◽  
Hydrodynamic Interaction ◽  
Removal Rate ◽  
Element Discretization ◽  
Weighted Residuals ◽  
Wafer Slicing ◽  
The Wire ◽  
Free Abrasive

Free abrasive machining (FAM) process associated with the wiresaw wafer slicing involves a three body abrasion environment. During the process, the cutting action is caused by fine abrasives freely dispersed in the slurry, which get trapped between an axially moving taut wire and the ingot being sliced. In this paper a model is proposed wherein the entry of abrasives into the cutting zone is governed by elasto-hydrodynamic (EHD) interaction between the slurry and the wire. An EHD film is formed by the abrasive carrying viscous slurry, squeezed between the wire and the ingot. This phenomenon is analyzed here using the finite element method. The analysis of such an interaction involves coupling of the basic Reynold’s equation of hydrodynamics with the elasticity equation of wire. Newton–Raphson algorithm is used to formulate and solve this basic coupling. The finite element discretization of the resulting nonlinear equation is carried out using Galerkin’s method of weighted residuals. Basic hydrodynamic interaction model and the incorporation of the entry level impact pressure into the inlet boundary conditions are the two novel features introduced in this work. The analysis yields film thickness profile and pressure distribution as a function of wire speed, slurry viscosity, and slicing conditions. A perusal of results suggests that the wiresawing occurs under “floating” machining condition. The minimum film thickness is greater than the average abrasive size. This is practically very important since the wiresaw is used to slice fragile semiconductor wafers with severe requirements on the surface finish. The possible mechanism by which a floating abrasive can cause material removal is also touched upon in this work. Material removal rate has been modeled based on energy considerations. [S0742-4787(00)00702-5]

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