Characterization of THz wave generated from air plasma induced by two-color laser with long wavelength

Author(s):  
LiangLiang Zhang ◽  
Shijing Zhang ◽  
Yuejin Zhao ◽  
Hang Zhao ◽  
Tong Wu ◽  
...  
Keyword(s):  
2011 ◽  
Vol 335-336 ◽  
pp. 989-993
Author(s):  
Mi Ouyang ◽  
Zhen Wei Yu ◽  
Yi Xu ◽  
Yu Jian Zhang ◽  
Cheng Zhang

Copolymers based on 1, 4-diethoxybenzene (DEB) and 3, 4-ethylenedioxythiophene (EDOT) were electrochemically synthesized and characterized. The structures of the copolymers were established by 1H NMR and FT-IR spectroscopy. The results indicated the final product was a copolymer instead of a blend or a composite. The physical properties were systematically investigated by cyclic voltammetry, UV-vis absorption and fluorescence. The PL maximum of copolymers presented obviously red-shift to long wavelength as the feed ratio of EDOT in monomer mixture increased.


2010 ◽  
Vol 26 (07) ◽  
pp. 2031-2036 ◽  
Author(s):  
SHAO Guang-Sheng ◽  
◽  
◽  
XUE Fu-Min ◽  
HAN Rong-Cheng ◽  
...  

1994 ◽  
Vol 299 ◽  
Author(s):  
R. P. Wright ◽  
S. E. Kohn ◽  
N. M. Haegel

AbstractA new photoluminescence spectrometer has been developed for the characterization of optical emission in the 2.5 to 14.1 micron wavelength range. This instrument provides high sensitivity for the detection of interband and defect luminescence in a variety of infrared detector materials. The spectrometer utilizes a solid state photomultiplier detector and a circular variable filter, which serves as the resolving element. The entire spectrometer is cooled to 5K in order to decrease thermal radiation emission. Band-edge luminescence at 10.1 microns from HgCdTe samples has been readily detected with argon-ion laser excitation powers less than 70 mW/cm2. Representative spectra from HgCdTe and other infrared detector materials are presented.


1990 ◽  
Vol 198 ◽  
Author(s):  
R.J. Koestner ◽  
M.W. Goodwin ◽  
H.F. Schaake

ABSTRACTHgCdTe heterostructures consisting of a thin n-type widegap (250 meV or 5 μm cutoff) layer deposited on an n-type narrowgap (100-125 meV or 10-13 μm cutoff) layer offer the promise of very high performance metal-insulator-semiconductor (MIS) photocapacitors for long wavelength infrared (LWIR) detection. Molecular Beam Epitaxy (MBE) is a candidate growth technology for these two layer films due to its fine control in composition, thickness and doping concentration. The critical materials issues are reducing the defect content associated with twins in the grown layers, achieving low net donor concentrations in the widegap layer, and avoiding the formation of misfit dislocations at the HgCdTe heterointerface. This paper will report on our recent progress in these directions.


1993 ◽  
Vol 8 (6S) ◽  
pp. 941-945 ◽  
Author(s):  
S R Kurtz ◽  
J Bajaj ◽  
D D Edwall ◽  
S J C Irvine

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