Silicon photonic integrated circuit for on-chip spectroscopic gas sensing

Author(s):  
Chi Xiong ◽  
Yves Martin ◽  
Eric J. Zhang ◽  
Jason S. Orcutt ◽  
Martin Glodde ◽  
...  
1994 ◽  
Vol 6 (8) ◽  
pp. 960-962 ◽  
Author(s):  
J.-M. Verdiell ◽  
T.L. Koch ◽  
B.I. Miller ◽  
M.E. Young ◽  
U. Koren ◽  
...  

Sensors ◽  
2021 ◽  
Vol 21 (2) ◽  
pp. 599
Author(s):  
Jerry R. Meyer ◽  
Chul Soo Kim ◽  
Mijin Kim ◽  
Chadwick L. Canedy ◽  
Charles D. Merritt ◽  
...  

We describe how a midwave infrared photonic integrated circuit (PIC) that combines lasers, detectors, passive waveguides, and other optical elements may be constructed on the native GaSb substrate of an interband cascade laser (ICL) structure. The active and passive building blocks may be used, for example, to fabricate an on-chip chemical detection system with a passive sensing waveguide that evanescently couples to an ambient sample gas. A variety of highly compact architectures are described, some of which incorporate both the sensing waveguide and detector into a laser cavity defined by two high-reflectivity cleaved facets. We also describe an edge-emitting laser configuration that optimizes stability by minimizing parasitic feedback from external optical elements, and which can potentially operate with lower drive power than any mid-IR laser now available. While ICL-based PICs processed on GaSb serve to illustrate the various configurations, many of the proposed concepts apply equally to quantum-cascade-laser (QCL)-based PICs processed on InP, and PICs that integrate III-V lasers and detectors on silicon. With mature processing, it should become possible to mass-produce hundreds of individual PICs on the same chip which, when singulated, will realize chemical sensing by an extremely compact and inexpensive package.


2021 ◽  
Author(s):  
Saeed Fathololoumi ◽  
David Hui ◽  
Susheel Jadhav ◽  
Kimchau Nguyen ◽  
Meer Nazmus Sakib ◽  
...  

2013 ◽  
Vol 25 (7) ◽  
pp. 648-651 ◽  
Author(s):  
Yunhong Ding ◽  
Haiyan Ou ◽  
Jing Xu ◽  
Christophe Peucheret

2013 ◽  
Vol 49 (20) ◽  
pp. 1291-1293 ◽  
Author(s):  
Ke Xu ◽  
Zhenzhou Cheng ◽  
Chi Yan Wong ◽  
Hon Ki Tsang

Author(s):  
Madhuri Suthar ◽  
Anamika Singh ◽  
K S Sanila ◽  
Fernando Ramiro Manzano ◽  
Kumar Appaiah ◽  
...  

Photonics ◽  
2019 ◽  
Vol 6 (4) ◽  
pp. 103 ◽  
Author(s):  
Alison Perrott ◽  
Ludovic Caro ◽  
Mohamad Dernaika ◽  
Frank Peters

The mutual and injection locking characteristics of two integrated lasers are compared, both on and off-chip. In this study, two integrated single facet slotted Fabry–Pérot lasers are utilised to develop the measurement technique used to examine the different operational regimes arising from optically locking a semiconductor diode laser. The technique employed used an optical spectrum analyser (OSA), an electrical spectrum analyser (ESA) and a high speed oscilloscope (HSO). The wavelengths of the lasers are measured on the OSA and the selected optical mode for locking is identified. The region of injection locking and various other regions of dynamical behaviour between the lasers are observed on the ESA. The time trace information of the system is obtained from the HSO and performing the FFT (Fast Fourier Transform) of the time traces returns the power spectra. Using these tools, the similarities and differences between off-chip injection locking with an isolator, and on-chip mutual locking are examined.


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