Spatial regulation of thermal emission based on polar material

Author(s):  
Han Wang ◽  
Huanzheng Zhu ◽  
Hao Luo ◽  
Qiang Li
Author(s):  
Stuart McKernan ◽  
C. Barry Carter

The determination of the absolute polarity of a polar material is often crucial to the understanding of the defects which occur in such materials. Several methods exist by which this determination may be performed. In bulk, single-domain specimens, macroscopic techniques may be used, such as the different etching behavior, using the appropriate etchant, of surfaces with opposite polarity. X-ray measurements under conditions where Friedel’s law (which means that the intensity of reflections from planes of opposite polarity are indistinguishable) breaks down can also be used to determine the absolute polarity of bulk, single-domain specimens. On the microscopic scale, and particularly where antiphase boundaries (APBs), which separate regions of opposite polarity exist, electron microscopic techniques must be employed. Two techniques are commonly practised; the first [1], involves the dynamical interaction of hoLz lines which interfere constructively or destructively with the zero order reflection, depending on the crystal polarity. The crystal polarity can therefore be directly deduced from the relative intensity of these interactions.


Author(s):  
W. T. Pike

With the advent of crystal growth techniques which enable device structure control at the atomic level has arrived a need to determine the crystal structure at a commensurate scale. In particular, in epitaxial lattice mismatched multilayers, it is of prime importance to know the lattice parameter, and hence strain, in individual layers in order to explain the novel electronic behavior of such structures. In this work higher order Laue zone (holz) lines in the convergent beam microdiffraction patterns from a thermal emission transmission electron microscope (TEM) have been used to measure lattice parameters to an accuracy of a few parts in a thousand from nanometer areas of material.Although the use of CBM to measure strain using a dedicated field emission scanning transmission electron microscope has already been demonstrated, the recording of the diffraction pattern at the required resolution involves specialized instrumentation. In this work, a Topcon 002B TEM with a thermal emission source with condenser-objective (CO) electron optics is used.


Author(s):  
S.-S. Lee ◽  
J.-S. Seo ◽  
N.-S. Cho ◽  
S. Daniel

Abstract Both photo- and thermal emission analysis techniques are used from the backside of the die colocate defect sites. The technique is important in that process and package technologies have made front-side analysis difficult or impossible. Several test cases are documented. Intensity attenuation through the bulk of the silicon does not compromise the usefulness of the technique in most cases.


Sign in / Sign up

Export Citation Format

Share Document