AC conductivity activation energy of composite cellulose-synthetic ester MIDEL 7131-water nanodrops

2019 ◽  
Author(s):  
Przemyslaw Rogalski
Keyword(s):  
Activation Energy ◽  
Ac Conductivity ◽  
Conductivity Activation Energy ◽  
Synthetic Ester

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Study on Low Temperature Conduction Mechanism of Al Doped ZnO/SiO2/ P-Si Heterojunction

2021 ◽  
Vol 904 ◽  
pp. 363-368
Author(s):  
Xiao Yan Zhou ◽  
Bang Sheng Yin
Keyword(s):  
Activation Energy ◽  
Impedance Spectroscopy ◽  
Low Temperature ◽  
Grain Boundaries ◽  
Ac Conductivity ◽  
Spray Pyrolysis Method ◽  
Temperature Conductivity ◽  
Calculated Activation Energy ◽  
Doped Zno ◽  
Temperature Conduction

The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV.

Measurements of Light-Induced Degradation in A-Si, Ge:H, F Alloys,

1986 ◽  
Vol 70 ◽  
Author(s):  
J. Kolodzey ◽  
S. Aljishi ◽  
Z E. Smith ◽  
V. Chu ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electronic Properties ◽  
Dark Conductivity ◽  
Narrow Gap ◽  
Conductivity Activation Energy ◽  
Optical And Electronic Properties ◽  
Amorphous Si

ABSTRACTThe effects of illumination on the optical and electronic properties of narrow gap hydrogenated and fluorinated amorphous Si-Ge (a-Si1-xGex:H, F) alloys have been evaluated. A series of alloys with optical gaps ranging from 1.30 eV to 1.64 eV has been light soaked at ∼1 sun intensity for 354 hours. Measurements of sub-gap absorption, photo- and dark conductivities and dark conductivity activation energy were made on alloys in the annealed and the light-soaked states. The results indicate that samples with optical gaps ≳ 1.4 eV degrade significantly. The 1.3 eV sample shows no degradation in its optical or electronic properties except for a factor of 5 increase in the dark conductivity.

Conductivity activation energy and analysis of the sintering process of dielectric ceramics

1998 ◽  
Vol 36 (5-6) ◽  
pp. 290-293 ◽  
Author(s):  
Jean-Claude M'Peko ◽  
A.Rabdel Ruiz-Salvador ◽  
Gerardo Rodrı́guez-Fuentes
Keyword(s):  
Activation Energy ◽  
Sintering Process ◽  
Conductivity Activation Energy ◽  
Dielectric Ceramics
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