Recent progress on crystal growth of high-quality (110)GaAs-based quantum wells for spin laser

2020 ◽  
Author(s):  
Satoshi Iba ◽  
Hidekazu Saito ◽  
Yuzo Ohno
Keyword(s):  
Crystal Growth ◽  
Quantum Wells ◽  
Recent Progress ◽  
High Quality

Silicon Carbide: Progress in Crystal Growth

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
High Temperature ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Single Crystal Silicon ◽  
Silicon Substrates ◽  
Large Area ◽  
High Quality ◽  
Crystal Silicon

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.

scholarly journals Novel Cs2HfCl6 Crystal Scintillator: Recent Progress and Perspectives

Physics ◽  
2021 ◽  
Vol 3 (2) ◽  
pp. 320-351
Author(s):  
Serge Nagorny
Keyword(s):  
Recent Progress ◽  
Raw Materials ◽  
Light Output ◽  
Light Yield ◽  
Thermal Conditions ◽  
Pulse Shape Discrimination ◽  
Main Element ◽  
High Quality ◽  
Crystal Sample ◽  
Discrimination Ability

Recent progress in Cs2HfCl6 (CHC) crystal production achieved within the last five years is presented. Various aspects have been analyzed, including the chemical purity of raw materials, purification methods, optimization of the growth and thermal conditions, crystal characterization, defect structure, and internal radioactive background. Large volume, crack-free, and high quality CHC crystals with an ultimate scintillating performance were produced as a result of such extensive research and development (R & D) program. For example, the CHC crystal sample with dimensions ∅23 × 30 mm3 demonstrates energy resolution of 3.2% FWHM at 662 keV, the relative light output at the level of 30,000 ph/MeV and excellent linearity down to 20 keV. Additionally, this material exhibits excellent pulse shape discrimination ability and low internal background of less than 1 Bq/kg. Furthermore, attempts to produce a high quality CHC crystal resulted in research on this material optimization by constitution of either alkali ions (Cs to Tl), or main element (Hf to Zr), or halogen ions (Cl to Br, I, or their mixture in different ratio), as well as doping with various active ions (Te4+, Ce3+, Eu3+, etc.). This leads to a range of new established scintillating materials, such as Tl2HfCl6, Tl2ZrCl6, Cs2HfCl4Br2, Cs2HfCl3Br3, Cs2ZrCl6, and Cs2HfI6. To exploit the whole potential of these compounds, detailed studies of the material’s fundamental properties, and understanding of the variety of the luminescence mechanisms are required. This will help to understand the origin of the high light yield and possible paths to further extend it. Perspectives of CHC crystals and related materials as detectors for rare nuclear processes are also discussed.

Recent progress of high-quality GaN substrates by HVPE method

2017 ◽  
Author(s):  
Hajime Fujikura ◽  
Takehiro Yoshida ◽  
Masatomo Shibata ◽  
Yohei Otoki
Keyword(s):  
Recent Progress ◽  
High Quality

Purification of organic compounds in high-quality crystal growth process

2000 ◽  
Vol 66 (2-3) ◽  
pp. 303-308 ◽  
Author(s):  
C Salati ◽  
G Mignoni ◽  
M Zha ◽  
L Zanotti ◽  
C Mucchino ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Organic Compounds ◽  
Growth Process ◽  
High Quality ◽  
Crystal Growth Process

Growth and characterization of high-quality MOCVD AlGaAs/GaAs single quantum wells

1984 ◽  
Vol 68 (1) ◽  
pp. 398-405 ◽  
Author(s):  
R.D. Dupuis ◽  
R.C. Miller ◽  
P.M. Petroff
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
High Quality

Dependence of Scintillators Optical Properties on Intrinsic Structural Defects

1994 ◽  
Vol 348 ◽  
Author(s):  
N.V. Kilassen
Keyword(s):  
Plastic Deformation ◽  
Optical Properties ◽  
Crystal Growth ◽  
Spectral Distribution ◽  
Light Output ◽  
Structural Defects ◽  
High Quality ◽  
Intrinsic Defects ◽  
Distribution Kinetics ◽  
Wide Range

ABSTRACTThe studies of the dependence of the optical properties of various scintillators on intrinsic structural defects have been reviewed. The greater part of the review is devoted to the defects introduced by plastic deformation. A wide range of variations in the light output, spectral distribution, kinetics and other properties has been observed. These defects can be induced during crystal growth, annealing, processing, etc. The proper regulation of the superstructure of intrinsic defects can ensure the production of high quality scintillators having required properties.

scholarly journals High quality protein crystal growth under microgravity in JAXA PCG project

2011 ◽  
Vol 67 (a1) ◽  
pp. C460-C460
Author(s):  
M. Sato ◽  
H. Tanaka ◽  
K. Inaka ◽  
S. Sano ◽  
M. Masaki ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Protein Crystal ◽  
High Quality ◽  
High Quality Protein ◽  
Protein Crystal Growth
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