Recent progress of high-quality GaN substrates by HVPE method

Author(s):  
Hajime Fujikura ◽  
Takehiro Yoshida ◽  
Masatomo Shibata ◽  
Yohei Otoki
Keyword(s):  
Physics ◽  
2021 ◽  
Vol 3 (2) ◽  
pp. 320-351
Author(s):  
Serge Nagorny

Recent progress in Cs2HfCl6 (CHC) crystal production achieved within the last five years is presented. Various aspects have been analyzed, including the chemical purity of raw materials, purification methods, optimization of the growth and thermal conditions, crystal characterization, defect structure, and internal radioactive background. Large volume, crack-free, and high quality CHC crystals with an ultimate scintillating performance were produced as a result of such extensive research and development (R & D) program. For example, the CHC crystal sample with dimensions ∅23 × 30 mm3 demonstrates energy resolution of 3.2% FWHM at 662 keV, the relative light output at the level of 30,000 ph/MeV and excellent linearity down to 20 keV. Additionally, this material exhibits excellent pulse shape discrimination ability and low internal background of less than 1 Bq/kg. Furthermore, attempts to produce a high quality CHC crystal resulted in research on this material optimization by constitution of either alkali ions (Cs to Tl), or main element (Hf to Zr), or halogen ions (Cl to Br, I, or their mixture in different ratio), as well as doping with various active ions (Te4+, Ce3+, Eu3+, etc.). This leads to a range of new established scintillating materials, such as Tl2HfCl6, Tl2ZrCl6, Cs2HfCl4Br2, Cs2HfCl3Br3, Cs2ZrCl6, and Cs2HfI6. To exploit the whole potential of these compounds, detailed studies of the material’s fundamental properties, and understanding of the variety of the luminescence mechanisms are required. This will help to understand the origin of the high light yield and possible paths to further extend it. Perspectives of CHC crystals and related materials as detectors for rare nuclear processes are also discussed.


2016 ◽  
Vol 221 ◽  
pp. 645-655 ◽  
Author(s):  
H. Hassan ◽  
J.K. Lim ◽  
B.H. Hameed
Keyword(s):  

1987 ◽  
Vol 97 ◽  
Author(s):  
J. Anthony Powell

ABSTRACTSilicon carbide (SiC), with a favorable combination of semiconducting and refractory properties, has long been a candidate for high temperature semiconductor applications. Research on processes for producing the needed large-area high quality single crystals has proceeded sporadically for many years. Two characteristics of SiC have aggravated the problem of its crystal growth. First, it cannot be melted at any reasonable pressure, and second, it forms many different crystalline structures, called polytypes. Recent progress in the development of two crystal growth processes will be described. These processes are the modified Lely process for the growth of the alpha polytypes (e.g. 6H SiC), and a process for the epitaxial growth of the beta polytype (i.e. 3C or cubic SiC) on single crystal silicon substrates. A discussion of the semiconducting qualities of crystals grown by various techniques will also be included.


Nanophotonics ◽  
2016 ◽  
Vol 5 (2) ◽  
pp. 292-315 ◽  
Author(s):  
Feng Li ◽  
Jinhui Yuan ◽  
Zhe Kang ◽  
Qian Li ◽  
P. K. A. Wai

AbstractFrequency comb sources have revolutionized metrology and spectroscopy and found applications in many fields. Stable, low-cost, high-quality frequency comb sources are important to these applications. Modeling of the frequency comb sources will help the understanding of the operation mechanism and optimization of the design of such sources. In this paper,we review the theoretical models used and recent progress of the modeling of frequency comb sources.


Nanoscale ◽  
2021 ◽  
Author(s):  
Zhen He ◽  
Yi Zhou ◽  
Anmin Liu ◽  
Liguo Gao ◽  
Chu Zhang ◽  
...  

High-quality electron transport layers (ETLs) are essential for stable and efficient perovskite solar cells (PSCs). Metal sulfides (MSs) are considered as potential candidates for ETLs due to their high carrier...


Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3283
Author(s):  
Driss Mouloua ◽  
Ahmed Kotbi ◽  
Geetanjali Deokar ◽  
Khaled Kaja ◽  
Mimoun El Marssi ◽  
...  

In the surge of recent successes of 2D materials following the rise of graphene, molybdenum disulfide (2D-MoS2) has been attracting growing attention from both fundamental and applications viewpoints, owing to the combination of its unique nanoscale properties. For instance, the bandgap of 2D-MoS2, which changes from direct (in the bulk form) to indirect for ultrathin films (few layers), offers new prospects for various applications in optoelectronics. In this review, we present the latest scientific advances in the field of synthesis and characterization of 2D-MoS2 films while highlighting some of their applications in energy harvesting, gas sensing, and plasmonic devices. A survey of the physical and chemical processing routes of 2D-MoS2 is presented first, followed by a detailed description and listing of the most relevant characterization techniques used to study the MoS2 nanomaterial as well as theoretical simulations of its interesting optical properties. Finally, the challenges related to the synthesis of high quality and fairly controllable MoS2 thin films are discussed along with their integration into novel functional devices.


2021 ◽  
Vol 70 (13) ◽  
pp. 1-35
Author(s):  
Wang Hao-Lin ◽  
◽  
Zong Qi-Jun ◽  
Huang Yan ◽  
Chen Yi-Wei ◽  
...  

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