Excimer-laser-beam homogenization for materials processing

Author(s):  
Lars Unnebrink ◽  
Thomas F. E. Henning ◽  
Ernst-Wolfgang Kreutz ◽  
Reinhart Poprawe
1991 ◽  
Author(s):  
Jenifer L. Bunis ◽  
Chris C. Abele ◽  
James D. Campbell ◽  
George F. Caudle

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.


1994 ◽  
Author(s):  
Angela Unkroth ◽  
Karin Pachomis ◽  
Jens-Uwe Walther ◽  
D. Zimare

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.


2003 ◽  
Vol 158 (2-3) ◽  
pp. 171-178 ◽  
Author(s):  
K Sugioka ◽  
K Obata ◽  
K Midorikawa ◽  
M.H Hong ◽  
D.J Wu ◽  
...  

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