Optical characterization of low-temperature GaAs

2000 ◽  
Author(s):  
Genmao Chen ◽  
Harry E. Ruda ◽  
Qiang Liu ◽  
Lech Z. Jedral ◽  
Champika H. Edirisinghe ◽  
...  
1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2012 ◽  
Vol 85 ◽  
pp. 138-141 ◽  
Author(s):  
Ivana Lj. Validžić ◽  
Miodrag Mitrić ◽  
Bojan M. Jokić ◽  
Mirjana I. Čomor

Author(s):  
L.V. Titova ◽  
T.B. Hoang ◽  
H.E. Jackson ◽  
L.M. Smith ◽  
J.M. Yarrison-Rice ◽  
...  

2013 ◽  
Vol 99 ◽  
pp. 128-130 ◽  
Author(s):  
M.A. Qaeed ◽  
K. Ibrahim ◽  
Ruchi Srivastava ◽  
M.K.M. Ali ◽  
A. Salhin

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