Abstract
Indium tin oxide (ITO) is the most important transparent conducting electrode to date and the candidate for ultrafast signal processing in telecommunication region. ITO is normally selectively removed in a multiple-steps process for device application. In this work, we aimed to study single pulse removal of ITO-coated glass and PET by using a nanosecond (ns) laser (266 nm) and a femtosecond (fs) laser (1,025 nm) where each process is dominated by either linear or nonlinear process. For ns laser, ITO was removed from PET substrate at 0.01 J/cm2. Detachment likely occurred via thermal-induced process because of the high absorption by both ITO and PET and the thermomechanical properties of PET. At higher laser fluence (∼0.04 J/cm2), the ITO films on both substrates were damaged, and at 1.34 J/cm2, ITO was ablated from the glass substrate. For fs laser removal via nonlinear process, ITO was removed from PET substrate at 0.3 J/cm2, but at 0.8 J/cm2, the PET substrate was also modified. ITO layer was partially removed from glass substrate by fs laser pulse at 0.3 J/cm2 and full removal only occurred at 1.7 J/cm2. Thus, the fluence range for single fs pulse removal of ITO/PET was 0.3–0.8 J/cm2 and >1.7 J/cm2 for ITO/glass.
Single pulse laser removal of indium tin oxide film on glass and polyethylene terephthalate by nanosecond and femtosecond laser