Electro-ridge for large injection current of micro-size InGaN light emitting diode

2005 ◽  
Author(s):  
B. J. Pong ◽  
C. H. Chen ◽  
J. F. Hsu ◽  
C. J. Tun ◽  
G. C. Chi
2019 ◽  
Vol 141 (4) ◽  
Author(s):  
Jia-Sheng Li ◽  
Yong Tang ◽  
Zong-Tao Li ◽  
Wen-Quan Kang ◽  
Xin-Rui Ding ◽  
...  

Abstract Quantum dot (QD) attracts great attention in light-emitting diode (LED) packaging for high-quality light sources, while it leads to low light efficiency due to the significantly high reabsorption loss between QDs. Accordingly, we experimentally study the reabsorption properties of QD color convertors (QCCs) for LED packaging considering various thicknesses and concentrations under different injection current. The results indicate the QCC configuration with a small thickness and large concentration can have the same absorption ability for chip light as that with the opposite configuration, resulting in the same QD light proportion. However, the QCC configuration having smaller thickness is more useful to decrease the reabsorption loss, leading to higher radiant power (an increase of larger than 37.2%). Moreover, it is essential to gain a high radiant power of QD light with small reabsorption loss, which can be realized by combining QCCs with a low QD content and a source with a large injection current. Based on this simple and effective approach, a conversion loss smaller than 20%, close to their quantum yield, can be achieved, which is approximately four times smaller than that gained by QCCs with a high QD content. However, it introduces additional radiant power of chip light, suppressing further improvement in the QD light proportion. Much work is still required to make full use of the redundant chip light. This study provides a better understanding of the reabsorption properties of QCCs and can significantly accelerate their applications in illumination and display applications.


2015 ◽  
Vol 15 (10) ◽  
pp. 7733-7737 ◽  
Author(s):  
Kwanjae Lee ◽  
Cheul-Ro Lee ◽  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Kee Young Lim ◽  
...  

We report the influences of a Si-doped graded superlattice (SiGSL) on the electrostatic discharge (ESD) characteristics of an InGaN/GaN light-emitting diode (LED). For comparison, a conventional InGaN/GaN LED (C-LED) was also investigated. The luminous efficacy for the SiGSL-LED was 2.68 times stronger than that for the C-LED at the injection current of 20 mA. The resistances estimated from current–voltage (I–V) characteristic curves were 16.5 and 8.8 Ω for the C-LED and SiGSL-LED, respectively. After the ESD treatment at the voltages of 4000 and 6000 V, there was no significant change in the I–V curves for the SiGSL-LED. Also, there was small variation in the I–V characteristics for the SiGSL-LED at the ESD voltage of 8000 V. However, the I–V curves for the C-LED were drastically degraded with increasing ESD voltage. While the light emission was not observed at the injection current of 20 mA from the C-LED sample after the ESD treatment, the emission spectra for the SiGSL-LED sample were clearly measured with the output powers of 10.47, 9.66, and 7.27 mW for the ESD voltages of 4000, 6000, and 8000 V respectively.


2007 ◽  
Vol 91 (5) ◽  
pp. 051121 ◽  
Author(s):  
Chi-Feng Huang ◽  
Cheng-Yen Chen ◽  
Chih-Feng Lu ◽  
C. C. Yang

2003 ◽  
Vol 798 ◽  
Author(s):  
Toshio Nishida ◽  
Tomoyuki Ban ◽  
Hisao Saito ◽  
Toshiki Makimoto

ABSTRACTWe applied a bulk AlN substrate to an AlGaN-based ultraviolet light emitting diode (UV-LED) and found that this combination enables high injection current, which shows the LED's potential for large ultraviolet flux extraction. Heat dissipation is an important issue for LEDs. Bulk AlN substrate has high thermal conductivity, a wurtzite crystal symmetry the same as that of nitride emitters, and transparency in the ultraviolet wavelength range. An UV-LED grown on a bulk AlN substrate shows output power linearity up to high injection current up to 300 mA, whereas a similar device grown on an AlN-template formed on a sapphire substrate only shows linearity up to an injection current of about 150 mA. It also showed very stable emission peak wavelength. For example, the emission peak shift is less than 2 nm in spite of the large injection current of 200 mA. Both findings are attributed to the heat dissipation afforded by the high thermal conductivity of the bulk AlN. This LED still suffers from internal absorption loss caused by the residual color centers in the AlN at present. However, further improvement of bulk AlN substrates will lead to high flux and highly efficient ultraviolet sources.


2021 ◽  
Author(s):  
Ray-Hua Horng ◽  
Chun-Xin Ye ◽  
Po-Wei Chen ◽  
Daisuke Iida ◽  
Kazuhiro Ohkawa ◽  
...  

Abstract In this research, five sizes (100⊆100, 75⊆75, 50⊆50, 25⊆25, 10⊆10 µm2) of InGaN red micro-light emitting diode (LED) dies are produced using laser-based direct writing and maskless technology. It is observed that with increasing injection current, the smaller the size of the micro-LED, the more obvious the blue shift of the emission wavelength. When the injection current is increased from 0.1 to 1 mA, the emission wavelength of the 10×10 µm2 micro-LED is shifted from 617.15 to 576.87 nm. The obvious blue shift is attributed to the stress release and high current density injection. Moreover, the output power density is very similar for smaller chip micro-LEDs at the same injection current density. This behavior is different from AlGaInP micro-LEDs. The sidewall defect is more easily repaired by passivation, which is similar to the behavior of blue micro-LEDs. The results indicate that the red InGaN epilayer structure provides an opportunity to realize the full color LEDs fabricated by GaN-based LEDs.


2020 ◽  
pp. 144-148

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.


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