Photonic band gap response of structurally modified non-close-packed inverse opals by template directed multilayer atomic layer deposition

ABSTRACTWe report a technique for the formation of infiltrated and inverse opal structures that produces high quality, low porosity conformal material structures. ZnS:Mn and TiO2 were deposited within the void space of an opal lattice by atomic layer deposition. The resulting structures were etched with HF to remove the silica opal template. Infiltrated and inverse opals were characterized by SEM, XRD, and transmission/reflection spectroscopy. The reflectance spectra exhibited features corresponding to strong low and high order photonic band gaps in the (111) direction (γ-L). In addition, deliberate partial infiltrations and multi-layered inverse opals have been formed. The effectiveness of a post-deposition heat treatment for converting TiO2 films to rutile was also studied.

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One-Dimensional TiO2@GaON Core-Shell Nanowires with Controlled Shell Thickness from Atomic Layer Deposition for Stable and Efficient Photoelectrochemical Water Splitting

10.26434/chemrxiv.9199796 ◽

2019 ◽

Author(s):

Jiajia Tao ◽

Hong-Ping Ma ◽

Kaiping Yuan ◽

Yang Gu ◽

Jianwei Lian ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Band Gap ◽

Water Splitting ◽

Atomic Layer ◽

Photoelectrochemical Water Splitting ◽

Core Shell ◽

Photoelectrochemical Performance ◽

Highly Efficient ◽

Layer Deposition ◽

Shell Nanowires

<div>As a promising oxygen evolution reaction semiconductor, TiO2 has been extensively investigated for solar photoelectrochemical water splitting. Here, a highly efficient and stable strategy for rationally preparing GaON cocatalysts on TiO2 by atomic layer deposition is demonstrated, which we show significantly enhances the</div><div>photoelectrochemical performance compared to TiO2-based photoanodes. For TiO2@20 nm-GaON core-shell nanowires a photocurrent density up to 1.10 mA cm-2 (1.23 V vs RHE) under AM 1.5 G irradiation (100 mW cm-2) has been achieved, which is 14 times higher than that of TiO2 NWs. Furthermore, the oxygen vacancy formation on GaON as well as the band gap matching with TiO2 not only provides more active sites for water oxidation but also enhances light absorption to promote interfacial charge separation and migration. Density functional theory studies of model systems of GaON-modified TiO2 confirm the band gap reduction, high reducibility and ability to activate water. The highly efficient and stable systems of TiO2@GaON core-shell nanowires provide a deeper understanding and universal strategy for enhancing photoelectrochemical performance of photoanodes now available. </div>

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Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽

10.3390/molecules25215043 ◽

2020 ◽

Vol 25 (21) ◽

pp. 5043

Author(s):

Chia-Hsun Hsu ◽

Xin-Peng Geng ◽

Wan-Yu Wu ◽

Ming-Jie Zhao ◽

Xiao-Ying Zhang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Band Gap ◽

Photoelectron Spectroscopy ◽

High Speed ◽

Oxygen Vacancies ◽

Annealing Temperature ◽

Atomic Layer ◽

Zno Films ◽

X Ray ◽

Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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TiO2 Inverse Opals Fabricated Using Low-Temperature Atomic Layer Deposition

Advanced Materials ◽

10.1002/adma.200400648 ◽

2005 ◽

Vol 17 (8) ◽

pp. 1010-1013 ◽

Cited By ~ 165

Author(s):

J. S. King ◽

E. Graugnard ◽

C. J. Summers

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Inverse Opals ◽

Layer Deposition

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Photonic band tuning in 2D photonic crystals by atomic layer deposition

2006 IEEE LEOS Annual Meeting Conference Proceedings ◽

10.1109/leos.2006.278973 ◽

2006 ◽

Author(s):

Elton Graugnard ◽

Davy Gaillot ◽

Simon Dunham ◽

Curtis Neff ◽

Tsuyoshi Yamashita ◽

...

Keyword(s):

Photonic Crystals ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition ◽

Photonic Band

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Atomic Layer Deposition of CeOx Nanoclusters on TiO2

10.26434/chemrxiv.12320855 ◽

2020 ◽

Author(s):

Ji Liu ◽

Saeed Saedy ◽

Rakshita Verma ◽

J. Ruud van Ommen ◽

Michael Nolan

Keyword(s):

Atomic Layer Deposition ◽

Band Gap ◽

Cerium Oxide ◽

Growth Rates ◽

Density Functional ◽

Visible Region ◽

Atomic Layer ◽

Hydroxyl Groups ◽

Powder Materials ◽

Layer Deposition

Titanium dioxide has a band-gap in the ultra violet region and there have been many efforts to shift light absorption to the visible region. In this regard, surface modification with metal oxide clusters has been used to promote band-gap reduction. CeOx-modified TiO2 materials have exhibited enhanced catalytic activity in water gas shift, but the deposition process used is not well-understood or suitable for powder materials. Atomic layer deposition (ALD) has been used for deposition of cerium oxide on TiO2. The experimentally reported growth rates using typical Ce metal precursors such as β-diketonates and cyclopentadienyls are low, with reported growth rates of ca. 0.2-0.4 Å/cycle. In this paper, we have performed density functional theory calculations to reveal the reaction mechanism of the metal precursor pulse together with experimental studies of ALD of CeOx using two Ce precursors, Ce(TMHD)4 and Ce(MeCp)3. The nature and stability of hydroxyl groups on anatase and rutile TiO2 surfaces are determined and used as starting substrates. Adsorption of the cerium precursors on the hydroxylated TiO2 surfaces reduces the coverage of surface hydroxyls. Computed activation barriers for ligand elimination in Ce(MeCp)3 indicate that ligand elimination is not possible on anatase (101) and rutile (100) surface, but it is possible on anatase (001) and rutile (110). The ligand elimination in Ce(TMHD)4 is via breaking the Ce-O bond and hydrogen transfer from hydroxyl groups. For this precursor, the ligand elimination on the majority surface facets of anatase and rutile TiO2 are endothermic and not favourable. It is difficult to deposit Ce atom onto hydroxylated TiO2 surface using Ce(TMHD)4 as precursor. Attempts for deposit cerium oxide on TiO2 nanoparticles that expose the anatase (101) surface show at best a low deposition rate and this can be explained by the non-favorable ligand elimination reactions at this surface.

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Systematic Study of the SiOx Film with Different Stoichiometry by Plasma-Enhanced Atomic Layer Deposition and Its Application in SiOx/SiO2 Super-Lattice

Nanomaterials ◽

10.3390/nano9010055 ◽

2019 ◽

Vol 9 (1) ◽

pp. 55 ◽

Cited By ~ 8

Author(s):

Hong-Ping Ma ◽

Jia-He Yang ◽

Jian-Guo Yang ◽

Li-Yuan Zhu ◽

Wei Huang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Band Gap ◽

Spectroscopic Ellipsometry ◽

Energy Band ◽

Electron Spectroscopy ◽

Atomic Layer ◽

Film Deposition ◽

Energy Band Gap ◽

X Ray ◽

Layer Deposition

Atomic scale control of the thickness of thin film makes atomic layer deposition highly advantageous in the preparation of high quality super-lattices. However, precisely controlling the film chemical stoichiometry is very challenging. In this study, we deposited SiOx film with different stoichiometry by plasma enhanced atomic layer deposition. After reviewing various deposition parameters like temperature, precursor pulse time, and gas flow, the silicon dioxides of stoichiometric (SiO2) and non-stoichiometric (SiO1.8 and SiO1.6) were successfully fabricated. X-ray photo-electron spectroscopy was first employed to analyze the element content and chemical bonding energy of these films. Then the morphology, structure, composition, and optical characteristics of SiOx film were systematically studied through atomic force microscope, transmission electron microscopy, X-ray reflection, and spectroscopic ellipsometry. The experimental results indicate that both the mass density and refractive index of SiO1.8 and SiO1.6 are less than SiO2 film. The energy band-gap is approved by spectroscopic ellipsometry data and X-ray photo-electron spectroscopy O 1s analysis. The results demonstrate that the energy band-gap decreases as the oxygen concentration decreases in SiOx film. After we obtained the Si-rich silicon oxide film deposition, the SiO1.6/SiO2 super-lattices was fabricated and its photoluminescence (PL) property was characterized by PL spectra. The weak PL intensity gives us greater awareness that more research is needed in order to decrease the x of SiOx film to a larger extent through further optimizing plasma-enhanced atomic layer deposition processes, and hence improve the photoluminescence properties of SiOx/SiO2 super-lattices.

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