Modal interferometric sensor based in a birefringent boron-doped microstructured fiber

2011 ◽  
Author(s):  
G. Statkiewicz-Barabach ◽  
J. P. Carvalho ◽  
O. Frazão ◽  
J. Olszewski ◽  
P. Mergo ◽  
...  
Keyword(s):  
Microstructured Fiber ◽  
Boron Doped ◽  
Interferometric Sensor

scholarly journals Intermodal interferometer for strain and temperature sensing fabricated in birefringent boron doped microstructured fiber

2011 ◽  
Vol 50 (21) ◽  
pp. 3742 ◽  
Author(s):  
G. Statkiewicz-Barabach ◽  
J. P. Carvalho ◽  
O. Frazão ◽  
J. Olszewski ◽  
P. Mergo ◽  
...  
Keyword(s):  
Temperature Sensing ◽  
Microstructured Fiber ◽  
Boron Doped

scholarly journals Doped Nanocrystalline Diamond Films as Reflective Layers for Fiber-Optic Sensors of Refractive Index of Liquids

Materials ◽  
2019 ◽  
Vol 12 (13) ◽  
pp. 2124 ◽  
Author(s):  
Monika Kosowska ◽  
Daria Majchrowicz ◽  
Kamatchi J. Sankaran ◽  
Mateusz Ficek ◽  
Ken Haenen ◽  
...  
Keyword(s):  
Refractive Index ◽  
Fiber Optic ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Fiber Optic Sensors ◽  
Nanocrystalline Diamond ◽  
Silicon Substrates ◽  
Boron Doped ◽  
Interferometric Sensor

This paper reports the application of doped nanocrystalline diamond (NCD) films—nitrogen-doped NCD and boron-doped NCD—as reflective surfaces in an interferometric sensor of refractive index dedicated to the measurements of liquids. The sensor is constructed as a Fabry–Pérot interferometer, working in the reflective mode. The diamond films were deposited on silicon substrates by a microwave plasma enhanced chemical vapor deposition system. The measurements of refractive indices of liquids were carried out in the range of 1.3 to 1.6. The results of initial investigations show that doped NCD films can be successfully used in fiber-optic sensors of refractive index providing linear work characteristics. Their application can prolong the lifespan of the measurement head and open the way to measure biomedical samples and aggressive chemicals.

Micro Extrinsic Fiber-Optic Fabry-Perot Interferometric Sensor Based on Erbium- and Boron-Doped Fibers

2010 ◽  
Vol 27 (2) ◽  
pp. 024208 ◽  
Author(s):  
Rao Yun-Jiang ◽  
Xu Bing ◽  
Ran Zeng-Ling ◽  
Gong Yuan
Keyword(s):  
Fiber Optic ◽  
Boron Doped ◽  
Fabry Perot ◽  
Doped Fibers ◽  
Interferometric Sensor

scholarly journals Sensitive Mach–Zehnder interferometric sensor based on a grapefruit microstructured fiber by lateral offset splicing

2020 ◽  
Vol 28 (18) ◽  
pp. 26564
Author(s):  
Yu Wang ◽  
Yan Zhou ◽  
Zhengyong Liu ◽  
Daru Chen ◽  
Chao Lu ◽  
...  
Keyword(s):  
Microstructured Fiber ◽  
Lateral Offset ◽  
Interferometric Sensor

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Heterodyne processing scheme for low coherence interferometric sensor systems

1991 ◽  
Vol 138 (6) ◽  
pp. 393
Author(s):  
B.T. Meggitt ◽  
W.J.O. Boyle ◽  
K.T.V. Grattan ◽  
A.E. Baruch ◽  
A.W. Palmer
Keyword(s):  
Sensor Systems ◽  
Processing Scheme ◽  
Low Coherence ◽  
Interferometric Sensor

A TEM-APFIM INVESTIGATION OF BORON-DOPED Ni3Al

1986 ◽  
Vol 47 (C2) ◽  
pp. C2-209-C2-214 ◽  
Author(s):  
J. A. HORTON ◽  
M. K. MILLER
Keyword(s):  
Boron Doped

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

DICLOFENAC REMOVAL FROM AQUEOUS SOLUTIONS BY ELECTROOXIDATION AT BORON-DOPED DIAMOND (BDD) ELECTRODE

2015 ◽  
Vol 14 (6) ◽  
pp. 1339-1345
Author(s):  
Monica Ihos ◽  
Florica Manea ◽  
Maria Jitaru ◽  
Corneliu Bogatu ◽  
Rodica Pode
Keyword(s):  
Aqueous Solutions ◽  
Boron Doped Diamond ◽  
Bdd Electrode ◽  
Boron Doped
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