Performance analysis of quantum dots infrared photodetector

2011 ◽  
Author(s):  
Hongmei Liu ◽  
Fangfang Zhang ◽  
Jianqi Zhang ◽  
Guojing He
Keyword(s):  
Quantum Dots ◽  
Performance Analysis ◽  
Infrared Photodetector

Synthesis of HgTe colloidal quantum dots for infrared photodetector

2021 ◽  
Vol 291 ◽  
pp. 129523
Author(s):  
Dan Liu ◽  
Sen Wen ◽  
Yuxiao Guo ◽  
Xingtian Yin ◽  
Wenxiu Que
Keyword(s):  
Quantum Dots ◽  
Colloidal Quantum Dots ◽  
Infrared Photodetector

Photocatalytic Performance Analysis of Bi 2 WO 6 Modified with CdSe Quantum Dots in Different Solvents

2020 ◽  
Vol 5 (31) ◽  
pp. 9563-9571
Author(s):  
Zhengguang Chen ◽  
Zuowei Zhang ◽  
Hongshun Hao ◽  
Liangliang Zhu ◽  
Chao Ding ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Performance Analysis ◽  
Photocatalytic Performance ◽  
Cdse Quantum Dots

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Energy states in InAs–GaAs quantum dots-in-asymmetric-well infrared photodetector structure

2006 ◽  
Vol 32 (1-2) ◽  
pp. 524-527 ◽  
Author(s):  
H.D. Nam ◽  
L. Doyennette ◽  
J.D. Song ◽  
W.J. Choi ◽  
H.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Energy States

Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation

2018 ◽  
Author(s):  
Subhananda Chakrabarti ◽  
Vidya P. Deviprasad ◽  
Hemant Ghadi ◽  
Debabrata Das ◽  
Debiprasad Panda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Short Wave ◽  
Infrared Photodetector ◽  
Short Wave Infrared ◽  
High Temperature Operation
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