Extension Of The Current Continuous Frequency Tuning Range Of GaAlAs Laser Diodes By The External Cavity

Author(s):  
Yao Shutong ◽  
Xie Linzhen
Author(s):  
Titus Oyedokun ◽  
Riana H. Geschke ◽  
Tinus Stander

Abstract We present a tunable planar groove gap waveguide (PGGWG) resonant cavity at Ka-band. The cavity demonstrates varactor loading and biasing without bridging wires or annular rings, as commonly is required in conventional substrate-integrated waveguide (SIW) resonant cavities. A detailed co-simulation strategy is also presented, with indicative parametric tuning data. Measured results indicate a 4.48% continuous frequency tuning range of 32.52–33.98 GHz and a Qu tuning range of 63–85, corresponding to the DC bias voltages of 0–16 V. Discrepancies between simulated and measured results are analyzed, and traced to process variation in the multi-layer printed circuit board stack, as well as unaccounted varactor parasitics and surface roughness.


2009 ◽  
Vol 74 ◽  
pp. 59-62 ◽  
Author(s):  
Ji Fang Tao ◽  
Wei Ming Zhu ◽  
Hong Cai ◽  
Jian Wu ◽  
Kun Xu ◽  
...  

This paper reports a new kind Terahertz generator using tunable dual-wavelength generator based on MEMS technology, which are developed based on free-carrier effect (FCE) and thermo-optic effect (TOE) [1-3]. The approach provides a wide tuning range from 0 to 15 nm by adjusting the current of laser diodes and heating up common silicon Fabry-Perot (FP) external cavity. Compared to the conventional optical generation methods, this method has fast tuning speed (<1 ms), small size (2.2 mm 0.8 mm), high integration and quite stability performance.


2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Yusaku Ito ◽  
Kenichi Okada ◽  
Kazuya Masu

This paper proposes a novel wideband LC-based voltage-controlled oscillator (VCO) for multistandard transceivers. The proposed VCO has a core LC-VCO and a tuning-range extension circuit, which consists of switches, a mixer, dividers, and variable gain combiners with a spurious rejection technique. The experimental results exhibit 0.98 to 6.6 GHz continuous frequency tuning with −206 dBc/Hz of FoMT, which is fabricated by using a 0.18 μm CMOS process. The frequency tuning range (FTR) is 149%, and the chip area is 800 μm × 540 μm.


1997 ◽  
Vol 137 (1-3) ◽  
pp. 77-82 ◽  
Author(s):  
Oleg Kazharsky ◽  
Sergei Pakhomov ◽  
Alexander Grachev ◽  
Yuri Mironov ◽  
Igor Goncharov ◽  
...  

1988 ◽  
Vol 24 (16) ◽  
pp. 988 ◽  
Author(s):  
J. Mellis ◽  
S.A. Al-Chalabi ◽  
K.H. Cameron ◽  
R. Wyatt ◽  
J.C. Regnault ◽  
...  

Author(s):  
I. Hassiaoui ◽  
N. Michel ◽  
M. Lecomte ◽  
O. Parillaud ◽  
M. Calligaro ◽  
...  

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