Selective Epitaxy Of Quantum Well Structures By Atmospheric Pressure OMCVD

AbstractSingle and double Si1-xGexx/Si quantum well (QW) structures, which were grown by atmospheric pressure chemical vapor deposition (APCVD), are characterized by photoluminescence and secondary ion mass spectrometry. Systematic post-growth annealing treatments were carried out at temperatures between 600°C and 1100°C in pure N2 ambient. The interdiffusion between the Si layer and the Si1-xGex, well layers occurs at the annealing temperature around 900°C. The diffusion coefficient is deduced at different temperatures from SIMS measurements for single QW structures. The activation energy is about 3.9 eV in the temperature range between 950°C and 1100°C. The double QW structures show a similar value, but the accurate value is more difficult to obtain because it is more complicated to analyze the SIMS profile of the double QW structures. The intensity of the exciton recombination related to carriers confined in the double QW structures decreases with increasing annealing temperatures and becomes strongly suppressed at 750°C. When the annealing temperature is increased further, the intensity of the QW emission recovers. The results indicate that nonradiative centers were generated at annealing temperature of about 750°C

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-ORIENTED GaAs/AlGaAs AND InGaAs/GaAs QUANTUM WELL STRUCTURES FABRICATED BY MOVPE AND THEIR OPTICAL AND STRAIN-INDUCED PIEZOELECTRIC PROPERTIES

International Journal of High Speed Electronics and Systems ◽

10.1142/s012915640000012x ◽

2000 ◽

Vol 10 (01) ◽

pp. 93-101

Author(s):

SOOHAENG CHO ◽

A. SANZ-HERVÁS ◽

JONGSEOK KIM ◽

A. MAJERFELD ◽

B. W. KIM

Keyword(s):

Quantum Well ◽

Electric Fields ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Piezoelectric Properties ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures ◽

Gaas Substrates ◽

Pl Emission

We report our recent results on the growth and properties of GaAs/AlGaAs and strained InGaAs/GaAs quantum well (QW) structures grown on (111)A GaAs substrates by atmospheric-pressure metalorganic vapor phase epitaxy. We have fabricated 25-period GaAs/AlGaAs multiquantum well structures with good crystal quality, high photoluminescence (PL) emission intensity and monolayer (ML) well width fluctuation. We also present the optical and piezoelectric properties of strained InGaAs/GaAs single quantum well structures grown on (111)A GaAs. Photoreflectance spectroscopy has been performed to analyze not only the excitonic transitions, but also the Franz-Keldysh oscillations to obtain the electric fields in the well and barriers, which are necessary to determine the actual QW potential profile and, thereby, to properly interpret the properties of the structures. A PL linewidth of 9.7 meV has been also achieved, which corresponds to a 1 ML interfacial roughness for an In0.14Ga0.86As well with a 40 Å width.

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Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90544-s ◽

1992 ◽

Vol 124 (1-4) ◽

pp. 737-740 ◽

Cited By ~ 48

Author(s):

A. Mircea ◽

A. Ougazzaden ◽

G. Primot ◽

C. Kazmierski

Keyword(s):

Quantum Well ◽

Atmospheric Pressure ◽

High Performance ◽

Optical Devices ◽

Thermally Stable ◽

Quantum Well Structures ◽

Multi Quantum Well

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OMVPE Growth of GalnAs/InP Quantum Well Structures

MRS Proceedings ◽

10.1557/proc-102-515 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 1

Author(s):

G. B. Stringfellow

Keyword(s):

Binding Energy ◽

Quantum Well ◽

Quantum Wells ◽

Vapor Phase ◽

Atmospheric Pressure ◽

Growth Conditions ◽

Binding Energies ◽

Optimum Conditions ◽

Quantum Well Structures ◽

Maximum Value

ABSTRACTInP/GalnAs/InP quantum well structures have been grown using atmospheric pressure organometallic vapor phase epitaxy (AP-OMVPE). The optimum conditions for growth of extremely abrupt interfaces were studied. The optimum orientation was exactly (100). The growth had to be interrupted for 40 seconds at the first interface and 2 minutes at the 2nd interface to obtain the most abrupt interfaces. The narrowest photoluminescence half widths were obtained at the lowest values (31) of V/III ratio in the input vapor phase. These growth conditions allow the growth of wells as thin as <10Å with photoluminescence (PL) spectra consisting of doublets or triplets. The extremely narrow peaks correspond to regions of the quantum well differing in thickness by a single monolayer. The energy separations of the neighboring peaks are found to increase with decreasing well width until, at a thickness of approximately 12 Å, the separation begins to decrease rapidly with decreasing well width. The exciton binding energies in the quantum wells have also been measured using thermally modulated PL. The binding energy is found to increase with decreasing well width until a maximum value of approximately 17 meV is measured for a nominal well width of approximately 13 Å. For thinner wells the exciton binding energy is found to decrease with decreasing well width.

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