Invited Paper Novel Chemistry For High Quality, Low Hydrogen PECVD Silicon Nitride Films

1987 ◽  
Author(s):  
D. E. Ibbotson ◽  
C. P. Chang ◽  
D. L. Flamm ◽  
J. A. Mucha
Keyword(s):  
Silicon Nitride ◽  
High Quality ◽  
Silicon Nitride Films

Ultra-thin high-quality silicon nitride films on Si(111)

2011 ◽  
Vol 94 (1) ◽  
pp. 16003 ◽  
Author(s):  
J. Falta ◽  
Th. Schmidt ◽  
S. Gangopadhyay ◽  
T. Clausen ◽  
O. Brunke ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
High Quality ◽  
Silicon Nitride Films

Fluorinated chemistry for high‐quality, low hydrogen plasma‐deposited silicon nitride films

1987 ◽  
Vol 62 (4) ◽  
pp. 1406-1415 ◽  
Author(s):  
Chorng‐Ping Chang ◽  
Daniel L. Flamm ◽  
Dale E. Ibbotson ◽  
John A. Mucha
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Plasma ◽  
High Quality ◽  
Silicon Nitride Films

High-quality hydrogen-diluted a-SiNx:H films deposited by hot-wire chemical vapor deposition

2004 ◽  
Vol 808 ◽  
Author(s):  
Fengzhen Liu ◽  
Lynn Gedvilas ◽  
Brian Keyes ◽  
Errol Sanchez ◽  
Shulin Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Surface Coverage ◽  
Chemical Vapor ◽  
Breakdown Field ◽  
Hot Wire ◽  
High Quality ◽  
Silicon Nitride Films ◽  
Gas Ratio

ABSTRACTWe have studied the effect of H dilution on silicon nitride films deposited by the hot-wire chemical vapor deposition (HWCVD) technique using SiH4, NH3, and H2 gases. We found that H dilution significantly enhances the properties at silicon nitride films. The N content in the film increases by more than 2 times compared to the film without dilution, based on FTIR measurements. As a result, we can achieve high-quality a-SiNx:H films at low substrate temperature using a much lower gas ratio of NH3/SiH4(∼1) compared to a ratio of about 100 for conventional deposition by HWCVD. We also found that dilution decreases the H content in the films. More importantly, diluted SiNx films are conformal. Scanning electron microscopy measurements show a nearly 100% surface coverage over a sharp object. Electric breakdown measurement shows a well-insulated film with more then a few MV/cm for the breakdown field.

scholarly journals Formation of High Quality Silicon Nitride Films using Microwave Excitation Plasma

Shinku ◽  
2007 ◽  
Vol 50 (11) ◽  
pp. 659-664
Author(s):  
Akinobu TERAMOTO ◽  
Takashi ARATANI ◽  
Masaaki HIGUCHI ◽  
Eiji IKENAGA ◽  
Masaki HIRAYAMA ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
High Quality ◽  
Silicon Nitride Films ◽  
Microwave Excitation

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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